Screen-printed p-CdTe layers for CdS/CdTe solar cells
Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes to form layers with required characteristics have been found. As distinct fro...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2005 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121646 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Screen-printed p-CdTe layers for CdS/CdTe solar cells / V.P. Klad'ko, P.M. Lytvyn, N.M. Osipyonok, G.S. Pekar, I.V. Prokopenko, A.F. Singaevsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 61-65. — Бібліогр.: 8 назв. — англ. |