Screen-printed p-CdTe layers for CdS/CdTe solar cells

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2005
• Hauptverfasser: Klad'ko, V.P., Lytvyn, P.M., Osipyonok, N.M., Pekar, G.S., Prokopenko, I.V., Singaevsky, A.F.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121646
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Screen-printed p-CdTe layers for CdS/CdTe solar cells / V.P. Klad'ko, P.M. Lytvyn, N.M. Osipyonok, G.S. Pekar, I.V. Prokopenko, A.F. Singaevsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 61-65. — Бібліогр.: 8 назв. — англ.

Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes to form layers with required characteristics have been found. As distinct fro...