Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system
Within the frames of the model of the polyassociative solutions the comparative analysis was performed of the formation parameters of multi-atom complexes in CdTe and Hg-Te systems. It was shown, that thermodynamical properties of the studied systems can be described in the supposition of the presen...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2005 |
| Main Authors: | Moskvin, P.P., Rashkovetskiy, L.V., Stronski, A.V. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121650 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system / Moskvin P.P., Rashkovetskiy L.V., Stronski A.V. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 81-85. — Бібліогр.: 12 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineSimilar Items
Polyassociative thermodynamic model of A²B⁶ semiconductor meltand phase equilibria in Cd-Hg-Te system. 4. p-T-x diagram of Cd-Hg-Te system
by: Moskvin, P.P., et al.
Published: (2006)
by: Moskvin, P.P., et al.
Published: (2006)
Polyassociative thermodynamical model of A₂B₆ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 1. Phase equilibria in initial two-component systems. Hg-Te system
by: Moskvin, P.P., et al.
Published: (2002)
by: Moskvin, P.P., et al.
Published: (2002)
Polyassociative thermodynamical model of A²B⁶ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 2. Phase equilibria in initial two-component systems. Cd-Te system
by: Moskvin, P.P., et al.
Published: (2003)
by: Moskvin, P.P., et al.
Published: (2003)
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System
by: Moskvin, P.P., et al.
Published: (2007)
by: Moskvin, P.P., et al.
Published: (2007)
Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals
by: Ostapov, S.E., et al.
Published: (2004)
by: Ostapov, S.E., et al.
Published: (2004)
HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe
by: Bekirov, B., et al.
Published: (2012)
by: Bekirov, B., et al.
Published: (2012)
Surface and interface bands of the CdTe–HgTe–CdTe heterostructure: Evidence of metallicity
by: I. N. Yakovkin
Published: (2021)
by: I. N. Yakovkin
Published: (2021)
Surface and interface bands of the CdTe–HgTe–CdTe heterostructure: Evidence of metallicity
by: I. N. Yakovkin
Published: (2021)
by: I. N. Yakovkin
Published: (2021)
Noise in HgCdTe LWIR arrays
by: Sizov, F.F., et al.
Published: (2002)
by: Sizov, F.F., et al.
Published: (2002)
Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe
by: Melezhik, Ye.O., et al.
Published: (2014)
by: Melezhik, Ye.O., et al.
Published: (2014)
Medium wavelength infrared HgCdTe discrete photodetectors
by: Z. F. Tsibrij, et al.
Published: (2017)
by: Z. F. Tsibrij, et al.
Published: (2017)
Electron relaxation and mobility in the inverted band quantum well CdTe/Hg1-xCdxTe/CdTe
by: E. O. Melezhik, et al.
Published: (2014)
by: E. O. Melezhik, et al.
Published: (2014)
HgCdTe quantum wells grown by molecular beam epitaxy
by: Dvoretsky, S.A, et al.
Published: (2007)
by: Dvoretsky, S.A, et al.
Published: (2007)
Passivation of CdHgTe epitaxial structures: ab initio calculations
by: R. M. Balabai
Published: (2012)
by: R. M. Balabai
Published: (2012)
Радиационная обработка ИК-фотоприемников на основе CdHgTe
by: Завадский, В.А., et al.
Published: (2001)
by: Завадский, В.А., et al.
Published: (2001)
Isothermal growth kinetics of CdxHg₁₋xTe LPE layers
by: Moskvin, P.P., et al.
Published: (2007)
by: Moskvin, P.P., et al.
Published: (2007)
Studies of CdHgTe as a material for x- and γ-ray detectors
by: Kosyachenko, L.A., et al.
Published: (2003)
by: Kosyachenko, L.A., et al.
Published: (2003)
Квантовый выход межзонной излучательной рекомбинации в кристаллах CdHgTe
by: Власенко, А.И., et al.
Published: (2004)
by: Власенко, А.И., et al.
Published: (2004)
Role of mechanical stresses at ion implantation of CdHgTe solid solutions
by: A. B. Smirnov, et al.
Published: (2013)
by: A. B. Smirnov, et al.
Published: (2013)
Role of mechanical stresses at ion implantation of CdHgTe solid solutions
by: O. B. Smirnov, et al.
Published: (2013)
by: O. B. Smirnov, et al.
Published: (2013)
Пасивація епітаксійних структур CdHgTe: розрахунки із перших принципів
by: Балабай, Р.М.
Published: (2012)
by: Балабай, Р.М.
Published: (2012)
The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions
by: Malyk, O.P.
Published: (2009)
by: Malyk, O.P.
Published: (2009)
Дискретні фотоприймачі середньохвильового ІЧ-діапазону спектру на основі HgCdTe
by: Tsybrii, Z. F., et al.
Published: (2017)
by: Tsybrii, Z. F., et al.
Published: (2017)
Дискретные фотоприемники средневолнового ИК-диапазона спектра на основе HgCdTe
by: Цибрий, З.Ф., et al.
Published: (2017)
by: Цибрий, З.Ф., et al.
Published: (2017)
Координатно-чувствительный фотоэлектромагнитный детектор ИК-излучения на основе HgCdTe
by: Боднарук, О.А., et al.
Published: (2004)
by: Боднарук, О.А., et al.
Published: (2004)
Some characteristics of semiconductor HgCdMnZnTe solid solution crystals
by: Popenko, N., et al.
Published: (2006)
by: Popenko, N., et al.
Published: (2006)
Uncooled wide-range spectral optoelectronic devices on the base of HgCdTe semiconductor
by: F. Sizov
Published: (2015)
by: F. Sizov
Published: (2015)
Uncooled wide-range spectral optoelectronic devices on the base of HgCdTe semiconductor
by: F. Sizov
Published: (2015)
by: F. Sizov
Published: (2015)
Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals
by: Virt, I.S., et al.
Published: (2000)
by: Virt, I.S., et al.
Published: (2000)
Емкостные свойства МДП-структур HgCdTe/SiO₂/Si₃N₄
by: Войцеховский, А.В., et al.
Published: (2005)
by: Войцеховский, А.В., et al.
Published: (2005)
Наноструктурування поверхні гетероепітаксіальної плівки CdHgTe методом йонної імплантації Ag⁺
by: Удовицька, Р.С.
Published: (2015)
by: Удовицька, Р.С.
Published: (2015)
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals
by: Bogoboyashchiy, V.V.
Published: (1999)
by: Bogoboyashchiy, V.V.
Published: (1999)
Photoluminescence excitation spectroscopy in narrow - gap Hg₁₋x₋yCd xMnyTe
by: Mazur, Yu. I.
Published: (1999)
by: Mazur, Yu. I.
Published: (1999)
Chemical dynamic polishing CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂–HCl–tartaric acid system
by: Tomashik, Z.F., et al.
Published: (2004)
by: Tomashik, Z.F., et al.
Published: (2004)
Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes
by: Kosyachenko, L.A., et al.
Published: (1999)
by: Kosyachenko, L.A., et al.
Published: (1999)
Взаимодействие твердых растворов ZnxCd1-xTe и Cd₀,₂Hg₀,₈Te с травителями системы NaNО₂–НІ–молочная кислота
by: Денисюк, Р.А., et al.
Published: (2016)
by: Денисюк, Р.А., et al.
Published: (2016)
Interaction of the ZnxCd1-xTe and Cd0.2Hg0.8Te solid solutions with NaNO2–NI–lactic acid etchants
by: R. A. Denisjuk, et al.
Published: (2016)
by: R. A. Denisjuk, et al.
Published: (2016)
Варизонные слои на основе твердых растворов CdHgTe для двухполосных ИК-фоторезисторов
by: Власенко, А.И., et al.
Published: (2001)
by: Власенко, А.И., et al.
Published: (2001)
In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection
by: N. I. Kukhtaruk, et al.
Published: (2017)
by: N. I. Kukhtaruk, et al.
Published: (2017)
Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition
by: E. O. Melezhik, et al.
Published: (2014)
by: E. O. Melezhik, et al.
Published: (2014)
Similar Items
-
Polyassociative thermodynamic model of A²B⁶ semiconductor meltand phase equilibria in Cd-Hg-Te system. 4. p-T-x diagram of Cd-Hg-Te system
by: Moskvin, P.P., et al.
Published: (2006) -
Polyassociative thermodynamical model of A₂B₆ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 1. Phase equilibria in initial two-component systems. Hg-Te system
by: Moskvin, P.P., et al.
Published: (2002) -
Polyassociative thermodynamical model of A²B⁶ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 2. Phase equilibria in initial two-component systems. Cd-Te system
by: Moskvin, P.P., et al.
Published: (2003) -
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System
by: Moskvin, P.P., et al.
Published: (2007) -
Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals
by: Ostapov, S.E., et al.
Published: (2004)