Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2016
• Автори: Ponomaryov, S.S., Yukhymchuk, V.O., Valakh, M.Ya.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/121651
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy / S.S. Ponomaryov, V.O. Yukhymchuk, M.Ya. Valakh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 321-327. — Бібліогр.: 28 назв. — англ.

The main difficulty in obtaining the lateral elemental composition distribution
 maps of the semiconductor nanostructures by Scanning Auger Microscopy is the thermal
 drift of the analyzed area, arising from its local heating with the electron probe and
 subsequent shift. Therefore, the main goal of the study was the development of the
 effective thermal drift correction procedure. The measurements were carried out on
 GeSi/Si nanoislands obtained with molecular beam epitaxy by means of Ge deposition on
 Si(100) substrate. Use of the thermal drift correction procedure made it possible to get
 the lateral elemental composition distribution maps of Si and Ge for various types of
 GeSi/Si nanoislands. The presence of the germanium core and silicon shell in both the
 dome GeSi/Si nanoislands and pyramid ones was established. In the authors’ opinion,
 this type of elemental distribution is a result of the completeness of the interdiffusion
 processes course in the island/wetting layer/substrate system, which play the key role in
 the nucleation, evolution and growth of GeSi/Si nanoislands. The proposed procedure of
 the thermal drift correction of the analyzed area allows direct determination of the lateral
 composition distribution of the GeSi/Si nanoislands with the size of the structural
 elements down to 10 nm.