Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2016
• Main Authors: Ponomaryov, S.S., Yukhymchuk, V.O., Valakh, M.Ya.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121651
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy / S.S. Ponomaryov, V.O. Yukhymchuk, M.Ya. Valakh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 321-327. — Бібліогр.: 28 назв. — англ.

The main difficulty in obtaining the lateral elemental composition distribution maps of the semiconductor nanostructures by Scanning Auger Microscopy is the thermal drift of the analyzed area, arising from its local heating with the electron probe and subsequent shift. Therefore, the main goal of...