Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties
Exploiting CVD technique for carbon deposition from C₂H₂+H₂+N₂ mixture, a graphene-like film synthesized directly on SiO₂ surface of SiO₂-Si structure was obtained. The graphene-like film was grown under thin Ni layer that is easy exfoliated from graphene-SiO₂-Si structure. Surface of the film was s...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2016 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121652 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties / E.G. Bortchagovsky, A.V. Vasin, P.M. Lytvyn, S.I. Tiagulskyi, A.M. Slobodian, I.N. Verovsky, V.V. Strelchuk, Yu. Stubrov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 328-333. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862530553010454528 |
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| author | Bortchagovsky, E.G. Vasin, A.V. Lytvyn, P.M. Tiagulskyi, S.I. Slobodian, A.M. Verovsky, I.N. Strelchuk, V.V. Stubrov, Yu. Nazarov, A.N. |
| author_facet | Bortchagovsky, E.G. Vasin, A.V. Lytvyn, P.M. Tiagulskyi, S.I. Slobodian, A.M. Verovsky, I.N. Strelchuk, V.V. Stubrov, Yu. Nazarov, A.N. |
| citation_txt | Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties / E.G. Bortchagovsky, A.V. Vasin, P.M. Lytvyn, S.I. Tiagulskyi, A.M. Slobodian, I.N. Verovsky, V.V. Strelchuk, Yu. Stubrov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 328-333. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Exploiting CVD technique for carbon deposition from C₂H₂+H₂+N₂ mixture, a graphene-like film synthesized directly on SiO₂ surface of SiO₂-Si structure was obtained. The graphene-like film was grown under thin Ni layer that is easy exfoliated from graphene-SiO₂-Si structure. Surface of the film was sufficiently smooth and reveals no winkles and holes; it has a good homogeneity and perfect adhesion to SiO₂ layer. Studying the micro-Raman spectra showed a graphene-like structure of the film; using atomic force microscopic technique, the thickness of film was determined (0.6 nm). Using spectroscopic ellipsometry and simple Cauchy model enabled us to estimate optical parameters of this graphene-like film.
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| first_indexed | 2025-11-24T02:25:30Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121652 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T02:25:30Z |
| publishDate | 2016 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bortchagovsky, E.G. Vasin, A.V. Lytvyn, P.M. Tiagulskyi, S.I. Slobodian, A.M. Verovsky, I.N. Strelchuk, V.V. Stubrov, Yu. Nazarov, A.N. 2017-06-15T08:11:23Z 2017-06-15T08:11:23Z 2016 Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties / E.G. Bortchagovsky, A.V. Vasin, P.M. Lytvyn, S.I. Tiagulskyi, A.M. Slobodian, I.N. Verovsky, V.V. Strelchuk, Yu. Stubrov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 328-333. — Бібліогр.: 19 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.04.328 PACS 68.65.Pq, 78.67.Wj https://nasplib.isofts.kiev.ua/handle/123456789/121652 Exploiting CVD technique for carbon deposition from C₂H₂+H₂+N₂ mixture, a graphene-like film synthesized directly on SiO₂ surface of SiO₂-Si structure was obtained. The graphene-like film was grown under thin Ni layer that is easy exfoliated from graphene-SiO₂-Si structure. Surface of the film was sufficiently smooth and reveals no winkles and holes; it has a good homogeneity and perfect adhesion to SiO₂ layer. Studying the micro-Raman spectra showed a graphene-like structure of the film; using atomic force microscopic technique, the thickness of film was determined (0.6 nm). Using spectroscopic ellipsometry and simple Cauchy model enabled us to estimate optical parameters of this graphene-like film. This work has been partially supported by Ministry of Education and Science of Ukraine (Project F2904). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties Article published earlier |
| spellingShingle | Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties Bortchagovsky, E.G. Vasin, A.V. Lytvyn, P.M. Tiagulskyi, S.I. Slobodian, A.M. Verovsky, I.N. Strelchuk, V.V. Stubrov, Yu. Nazarov, A.N. |
| title | Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties |
| title_full | Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties |
| title_fullStr | Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties |
| title_full_unstemmed | Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties |
| title_short | Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties |
| title_sort | direct synthesized graphene-like film on sio₂: mechanical and optical properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121652 |
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