Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2016
• Hauptverfasser: Bortchagovsky, E.G., Vasin, A.V., Lytvyn, P.M., Tiagulskyi, S.I., Slobodian, A.M., Verovsky, I.N., Strelchuk, V.V., Stubrov, Yu., Nazarov, A.N.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121652
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties / E.G. Bortchagovsky, A.V. Vasin, P.M. Lytvyn, S.I. Tiagulskyi, A.M. Slobodian, I.N. Verovsky, V.V. Strelchuk, Yu. Stubrov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 328-333. — Бібліогр.: 19 назв. — англ.

Exploiting CVD technique for carbon deposition from C₂H₂+H₂+N₂ mixture, a graphene-like film synthesized directly on SiO₂ surface of SiO₂-Si structure was obtained. The graphene-like film was grown under thin Ni layer that is easy exfoliated from graphene-SiO₂-Si structure. Surface of the film was s...