The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes
By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it has been shown that a new recombination channel becomes operative when Shockley–Read–Hall lifetime is below 20 ms and the density of doping impurities or the...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2016 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Cite this: | The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes / A.V. Sachenko, V.P. Kostylyov, V.M. Vlasiuk, I.O. Sokolovskyi, M.A. Evstigneev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 334-342. — Бібліогр.: 24 назв. — англ. |
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Sachenko, A.V. Kostylyov, V.P. Vlasiuk, V.M. Sokolovskyi, I.O. Evstigneev, M.A. 2017-06-15T08:12:26Z 2017-06-15T08:12:26Z 2016 The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes / A.V. Sachenko, V.P. Kostylyov, V.M. Vlasiuk, I.O. Sokolovskyi, M.A. Evstigneev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 334-342. — Бібліогр.: 24 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.04.334 PACS 72.20.J, 78.60.J https://nasplib.isofts.kiev.ua/handle/123456789/121653 By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it has been shown that a new recombination channel becomes operative when Shockley–Read–Hall lifetime is below 20 ms and the density of doping impurities or the excess electron-hole pair density is of the order of 10¹⁶ cm⁻³. This recombination mechanism is related to the non-radiative exciton Auger recombination assisted by the deep impurities in the bulk. The influence of non-radiative exciton recombination on the photoconversion efficiency in solar cells has been analyzed. It has been shown that the shorter the Shockley–Read–Hall lifetime, τSHR, the stronger its effect. In particular, for τSHR = 100 μs, this recombination channel leads to the reduction of the photoconversion efficiency by 5.5%. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes |
| spellingShingle |
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes Sachenko, A.V. Kostylyov, V.P. Vlasiuk, V.M. Sokolovskyi, I.O. Evstigneev, M.A. |
| title_short |
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes |
| title_full |
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes |
| title_fullStr |
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes |
| title_full_unstemmed |
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes |
| title_sort |
influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. long shockley–read–hall lifetimes |
| author |
Sachenko, A.V. Kostylyov, V.P. Vlasiuk, V.M. Sokolovskyi, I.O. Evstigneev, M.A. |
| author_facet |
Sachenko, A.V. Kostylyov, V.P. Vlasiuk, V.M. Sokolovskyi, I.O. Evstigneev, M.A. |
| publishDate |
2016 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it has been shown that a new recombination channel becomes operative when Shockley–Read–Hall lifetime is below 20 ms and the density of doping impurities or the excess electron-hole pair density is of the order of 10¹⁶ cm⁻³. This recombination mechanism is related to the non-radiative exciton Auger recombination assisted by the deep impurities in the bulk. The influence of non-radiative exciton recombination on the photoconversion efficiency in solar cells has been analyzed. It has been shown that the shorter the Shockley–Read–Hall lifetime, τSHR, the stronger its effect. In particular, for τSHR = 100 μs, this recombination channel leads to the reduction of the photoconversion efficiency by 5.5%.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121653 |
| citation_txt |
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes / A.V. Sachenko, V.P. Kostylyov, V.M. Vlasiuk, I.O. Sokolovskyi, M.A. Evstigneev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 334-342. — Бібліогр.: 24 назв. — англ. |
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2025-12-02T04:54:46Z |
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