The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2016
• Hauptverfasser: Sachenko, A.V., Kostylyov, V.P., Vlasiuk, V.M., Sokolovskyi, I.O., Evstigneev, M.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121653
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes / A.V. Sachenko, V.P. Kostylyov, V.M. Vlasiuk, I.O. Sokolovskyi, M.A. Evstigneev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 334-342. — Бібліогр.: 24 назв. — англ.

By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it has been shown that a new recombination channel becomes operative when Shockley–Read–Hall lifetime is below 20 ms and the density of doping impurities or the...