Long-term radiation-induced optical darkening effects in chalcogenide glasses
In this work, it is reported that the γ-irradiated (2.41 MGy accumulated dose) glasses As₂S₃ (∼2 mm thick) and Ge₁₅.₈As₂₁S₆₃.₂ (∼1 mm thick), both measured ∼10 years after γ-irradiation, exhibit radiation-induced optical darkening effect (i.e., long-wave shift of fundamental optical absorption edge)...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2016 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121681 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Long-term radiation-induced optical darkening effects in chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 395-398. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862533753160597504 |
|---|---|
| author | Kavetskyy, T.S. |
| author_facet | Kavetskyy, T.S. |
| citation_txt | Long-term radiation-induced optical darkening effects in chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 395-398. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work, it is reported that the γ-irradiated (2.41 MGy accumulated dose) glasses As₂S₃ (∼2 mm thick) and Ge₁₅.₈As₂₁S₆₃.₂ (∼1 mm thick), both measured ∼10 years after γ-irradiation, exhibit radiation-induced optical darkening effect (i.e., long-wave shift of fundamental optical absorption edge). In the case of As₂S₃ glass, the observed longterm radiation-induced optical darkening effect is well comparable with that reported in literature for γ-irradiated (∼3 MGy accumulated dose) glass As₂S₃ (1.5 mm thick), measured directly after γ-irradiation. In view of practical application, this finding demonstrates the possibilities for development of innovative chalcogenide glass based long-term dosimeter systems with stable and controlled parameters. A possible general criterion for mechanisms of long-term radiation-induced structural changes in chalcogenide glasses has been also considered.
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| first_indexed | 2025-11-24T06:16:35Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121681 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T06:16:35Z |
| publishDate | 2016 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kavetskyy, T.S. 2017-06-15T09:25:27Z 2017-06-15T09:25:27Z 2016 Long-term radiation-induced optical darkening effects in chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 395-398. — Бібліогр.: 20 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.04.395 PACS 61.43.Fs, 61.80.Ed, 78.40.Fy, 78.40.Pg https://nasplib.isofts.kiev.ua/handle/123456789/121681 In this work, it is reported that the γ-irradiated (2.41 MGy accumulated dose) glasses As₂S₃ (∼2 mm thick) and Ge₁₅.₈As₂₁S₆₃.₂ (∼1 mm thick), both measured ∼10 years after γ-irradiation, exhibit radiation-induced optical darkening effect (i.e., long-wave shift of fundamental optical absorption edge). In the case of As₂S₃ glass, the observed longterm radiation-induced optical darkening effect is well comparable with that reported in literature for γ-irradiated (∼3 MGy accumulated dose) glass As₂S₃ (1.5 mm thick), measured directly after γ-irradiation. In view of practical application, this finding demonstrates the possibilities for development of innovative chalcogenide glass based long-term dosimeter systems with stable and controlled parameters. A possible general criterion for mechanisms of long-term radiation-induced structural changes in chalcogenide glasses has been also considered. The investigated samples used for measurements were prepared within joint research projects (#0106U007386 and #0109U007446c) between DSPU (Drohobych, Ukraine) and SRC “Carat” (Lviv, Ukraine) supported by the MES of Ukraine (#0106U007385 and #0109U007445). Support of DAAD (Germany) and MES of Ukraine (projects #0111U001021 and #0114U002616) is also gratefully acknowledged. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Long-term radiation-induced optical darkening effects in chalcogenide glasses Article published earlier |
| spellingShingle | Long-term radiation-induced optical darkening effects in chalcogenide glasses Kavetskyy, T.S. |
| title | Long-term radiation-induced optical darkening effects in chalcogenide glasses |
| title_full | Long-term radiation-induced optical darkening effects in chalcogenide glasses |
| title_fullStr | Long-term radiation-induced optical darkening effects in chalcogenide glasses |
| title_full_unstemmed | Long-term radiation-induced optical darkening effects in chalcogenide glasses |
| title_short | Long-term radiation-induced optical darkening effects in chalcogenide glasses |
| title_sort | long-term radiation-induced optical darkening effects in chalcogenide glasses |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121681 |
| work_keys_str_mv | AT kavetskyyts longtermradiationinducedopticaldarkeningeffectsinchalcogenideglasses |