Long-term radiation-induced optical darkening effects in chalcogenide glasses
In this work, it is reported that the γ-irradiated (2.41 MGy accumulated dose) glasses As₂S₃ (∼2 mm thick) and Ge₁₅.₈As₂₁S₆₃.₂ (∼1 mm thick), both measured ∼10 years after γ-irradiation, exhibit radiation-induced optical darkening effect (i.e., long-wave shift of fundamental optical absorption edge)...
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| Datum: | 2016 |
|---|---|
| 1. Verfasser: | Kavetskyy, T.S. |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121681 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Long-term radiation-induced optical darkening effects in chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 395-398. — Бібліогр.: 20 назв. — англ. |
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