Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃

• Veröffentlicht in: Физика низких температур
• Datum: 2005
• Hauptverfasser: Pluzhnikov, V.B., Grechnev, G.E., Czopnik, A., Eriksson, O.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2005
• Schlagworte: Электpонные свойства металлов и сплавов
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121761
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃ / V.B. Pluzhnikov, G.E. Grechnev, A. Czopnik, O. Eriksson // Физика низких температур. — 2005. — Т. 31, № 3-4. — С. 412-421. — Бібліогр.: 34 назв. — англ.

The Fermi surfaces and cyclotron masses of LuGa₃ and TmGa₃ compounds are studied by means
 of the de Haas—van Alphen effect technique under pressure. The highly anisotropic pressure
 dependences of the de Haas—van Alphen frequencies and cyclotron masses have been observed in
 both compounds. Concurrently, the ab initio calculations of the volume-dependent band structures
 have been carried out for these compounds, including ferromagnetic configuration phase of
 TmGa₃, by employing a relativistic version of the full-potential linear muffin-tin orbital method
 within the local spin-density approximation. The experimental data have been analysed on the basis
 of the calculated volume-dependent band structures and compared with the corresponding pressure
 effects in the isostructural compound ErGa₃.