Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃
The Fermi surfaces and cyclotron masses of LuGa₃ and TmGa₃ compounds are studied by means
 of the de Haas—van Alphen effect technique under pressure. The highly anisotropic pressure
 dependences of the de Haas—van Alphen frequencies and cyclotron masses have been observed in
...
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| Опубліковано в: : | Физика низких температур |
|---|---|
| Дата: | 2005 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121761 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃ / V.B. Pluzhnikov, G.E. Grechnev, A. Czopnik, O. Eriksson // Физика низких температур. — 2005. — Т. 31, № 3-4. — С. 412-421. — Бібліогр.: 34 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862614765015138304 |
|---|---|
| author | Pluzhnikov, V.B. Grechnev, G.E. Czopnik, A. Eriksson, O. |
| author_facet | Pluzhnikov, V.B. Grechnev, G.E. Czopnik, A. Eriksson, O. |
| citation_txt | Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃ / V.B. Pluzhnikov, G.E. Grechnev, A. Czopnik, O. Eriksson // Физика низких температур. — 2005. — Т. 31, № 3-4. — С. 412-421. — Бібліогр.: 34 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | The Fermi surfaces and cyclotron masses of LuGa₃ and TmGa₃ compounds are studied by means
of the de Haas—van Alphen effect technique under pressure. The highly anisotropic pressure
dependences of the de Haas—van Alphen frequencies and cyclotron masses have been observed in
both compounds. Concurrently, the ab initio calculations of the volume-dependent band structures
have been carried out for these compounds, including ferromagnetic configuration phase of
TmGa₃, by employing a relativistic version of the full-potential linear muffin-tin orbital method
within the local spin-density approximation. The experimental data have been analysed on the basis
of the calculated volume-dependent band structures and compared with the corresponding pressure
effects in the isostructural compound ErGa₃.
|
| first_indexed | 2025-11-29T10:36:39Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121761 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-11-29T10:36:39Z |
| publishDate | 2005 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Pluzhnikov, V.B. Grechnev, G.E. Czopnik, A. Eriksson, O. 2017-06-16T06:40:46Z 2017-06-16T06:40:46Z 2005 Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃ / V.B. Pluzhnikov, G.E. Grechnev, A. Czopnik, O. Eriksson // Физика низких температур. — 2005. — Т. 31, № 3-4. — С. 412-421. — Бібліогр.: 34 назв. — англ. 0132-6414 PACS: 71.18.+y, 71.20.Eh, 71.70.Gm https://nasplib.isofts.kiev.ua/handle/123456789/121761 The Fermi surfaces and cyclotron masses of LuGa₃ and TmGa₃ compounds are studied by means
 of the de Haas—van Alphen effect technique under pressure. The highly anisotropic pressure
 dependences of the de Haas—van Alphen frequencies and cyclotron masses have been observed in
 both compounds. Concurrently, the ab initio calculations of the volume-dependent band structures
 have been carried out for these compounds, including ferromagnetic configuration phase of
 TmGa₃, by employing a relativistic version of the full-potential linear muffin-tin orbital method
 within the local spin-density approximation. The experimental data have been analysed on the basis
 of the calculated volume-dependent band structures and compared with the corresponding pressure
 effects in the isostructural compound ErGa₃. The authors dedicate this work to the 90th anniversary
 of E.S. Borovik, who was one of pioneers of the
 Fermi surfaces studies [34].
 We are grateful to Professors J. Klamut, T. Palewski,
 V. Nizhankovskii, and I.V. Svechkarev for
 their kind support and fruitful scientific discussions.
 This work has been partly supported by The Swedish
 Natural Science Research Council (VR) and The
 Swedish Foundation for Strategic Research (SSF). en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Электpонные свойства металлов и сплавов Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃ Article published earlier |
| spellingShingle | Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃ Pluzhnikov, V.B. Grechnev, G.E. Czopnik, A. Eriksson, O. Электpонные свойства металлов и сплавов |
| title | Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃ |
| title_full | Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃ |
| title_fullStr | Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃ |
| title_full_unstemmed | Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃ |
| title_short | Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃ |
| title_sort | pressure effect on the fermi surface and electronic structure of luga₃ and tmga₃ |
| topic | Электpонные свойства металлов и сплавов |
| topic_facet | Электpонные свойства металлов и сплавов |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121761 |
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