Structural formation and thermal relaxation of quench-condensed Kr films: effect on EPR spectrum of trapped hydrogen atoms

Hydrogen atoms were trapped in a quench condensed Kr matrix and investigated by EPR. Each hyperfine
 component is a superposition of broad and narrow line. The spectrum of narrow lines shows an axial anisotropy
 of the hyperfine structure constant. The extent of the anisotropy is fou...

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Збережено в:
Бібліографічні деталі
Опубліковано в: :Физика низких температур
Дата:2007
Автор: Dmitriev, Yu.A.
Формат: Стаття
Мова:Англійська
Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2007
Теми:
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121782
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Structural formation and thermal relaxation of
 quench-condensed Kr films: effect on EPR spectrum of
 trapped hydrogen atoms / Yu.A. Dmitriev // Физика низких температур. — 2007. — Т. 33, № 6-7. — С. 661-667. — Бібліогр.: 21 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:Hydrogen atoms were trapped in a quench condensed Kr matrix and investigated by EPR. Each hyperfine
 component is a superposition of broad and narrow line. The spectrum of narrow lines shows an axial anisotropy
 of the hyperfine structure constant. The extent of the anisotropy is found to depend on both the deposition
 temperature, Tdep, and the temperature of the solid sample, Tsample. As Tdep increases, the broad lines diminish
 while the anisotropy of the spectrum of narrow lines becomes less pronounced. The spectrum of
 narrow lines originate from H atoms in well defined environments and is attributed to a superposition of two
 spectra given by the atoms in substitutional fcc and hcp sites. The spectrum of broad lines is assumed to originate
 from the atoms trapped in highly disordered regions in the lattice. These regions are found to start relaxing
 at Tsample as low as 12 K.
ISSN:0132-6414