Thermally stimulated exoelectron emission from solid Xe

• Опубліковано в: : Физика низких температур
• Дата: 2007
• Автори: Khyzhniy, I.V., Grigorashchenko, O.N., Ponomaryov, A.N., Savchenko, E.V., Bondybey, V.E.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2007
• Теми: Electronic Processes in Cryocrystals
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/121792
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Thermally stimulated exoelectron emission from solid Xe / I.V. Khyzhniy, O.N. Grigorashchenko, A.N. Ponomaryov, E.V. Savchenko, V.E. Bondybey // Физика низких температур. — 2007. — Т. 33, № 6-7. — С. 701-704. — Бібліогр.: 11 назв. — рос.

Thermally-stimulated emission of exoelectrons and photons from solid Xe pre-irradiated by low-energy
 electrons were studied. A high sensitivity of thermally-stimulated luminescence (TSL) and thermally-stimulated
 exoelectron emission (TSEE) to sample prehistory was demonstrated. It was shown that electron traps
 in unannealed samples are characterized by a much broader distribution of trap levels in comparison with annealed
 samples and their concentration exceeds in number that in annealed samples. Both phenomena, TSL
 and TSEE, were found to be triggered by release of electrons from the same kind of traps. The data obtained
 suggest a competition between two relaxation channels: charge recombination and electron transport terminated
 by TSL and TSEE. It was found that TSEE predominates at low temperatures while at higher temperatures
 TSL prevails. An additional relaxation channel, a photon-stimulated exoelectron emission from pre-irradiated
 solid Xe, was revealed.