About self-activated orange emission in ZnO

Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL band peaking at 610 nm was separated by Gaussian deconvolution. Based on the obta...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2015
Автори: Markevich, I.V., Stara, T.R., Bondarenko, V.O.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121804
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:About self-activated orange emission in ZnO / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 134-137. — Бібліогр.: 17 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121804
record_format dspace
spelling Markevich, I.V.
Stara, T.R.
Bondarenko, V.O.
2017-06-18T10:33:23Z
2017-06-18T10:33:23Z
2015
About self-activated orange emission in ZnO / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 134-137. — Бібліогр.: 17 назв. — англ.
1560-8034
DOI: 10.15407/spqeo18.02.134
PACS 81.05.Dz, 81.05.Je
https://nasplib.isofts.kiev.ua/handle/123456789/121804
Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL band peaking at 610 nm was separated by Gaussian deconvolution. Based on the obtained results compared with some literature data, it has been concluded that the defects responsible for self-activated orange emission in ZnO are zinc vacancies.
This research has been financially supported by National Academy of Sciences of Ukraine (project III-4-11).
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
About self-activated orange emission in ZnO
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title About self-activated orange emission in ZnO
spellingShingle About self-activated orange emission in ZnO
Markevich, I.V.
Stara, T.R.
Bondarenko, V.O.
title_short About self-activated orange emission in ZnO
title_full About self-activated orange emission in ZnO
title_fullStr About self-activated orange emission in ZnO
title_full_unstemmed About self-activated orange emission in ZnO
title_sort about self-activated orange emission in zno
author Markevich, I.V.
Stara, T.R.
Bondarenko, V.O.
author_facet Markevich, I.V.
Stara, T.R.
Bondarenko, V.O.
publishDate 2015
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL band peaking at 610 nm was separated by Gaussian deconvolution. Based on the obtained results compared with some literature data, it has been concluded that the defects responsible for self-activated orange emission in ZnO are zinc vacancies.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121804
citation_txt About self-activated orange emission in ZnO / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 134-137. — Бібліогр.: 17 назв. — англ.
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