Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors
Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor f...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Zitieren: | Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors / V.S. Slipokurov, M.M. Dub, A.K. Tkachenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 144-146. — Бібліогр.: 7 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-1218062025-02-23T18:23:22Z Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors Slipokurov, V.S. Dub, M.M. Tkachenko, A.K. Kudryk, Ya.Ya. Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor for the unannealed sample and the sample after rapid thermal annealing it has been shown that variation of the contact resistance on the plate is related with that of semiconductor and may be caused by inhomogeneity of the dopant distribution. 2015 Article Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors / V.S. Slipokurov, M.M. Dub, A.K. Tkachenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 144-146. — Бібліогр.: 7 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.02.144 PACS 73.40.Cg https://nasplib.isofts.kiev.ua/handle/123456789/121806 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor for the unannealed sample and the sample after rapid thermal annealing it has been shown that variation of the contact resistance on the plate is related with that of semiconductor and may be caused by inhomogeneity of the dopant distribution. |
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Slipokurov, V.S. Dub, M.M. Tkachenko, A.K. Kudryk, Ya.Ya. |
| spellingShingle |
Slipokurov, V.S. Dub, M.M. Tkachenko, A.K. Kudryk, Ya.Ya. Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Slipokurov, V.S. Dub, M.M. Tkachenko, A.K. Kudryk, Ya.Ya. |
| author_sort |
Slipokurov, V.S. |
| title |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_short |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_full |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_fullStr |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_full_unstemmed |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_sort |
methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
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https://nasplib.isofts.kiev.ua/handle/123456789/121806 |
| citation_txt |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors / V.S. Slipokurov, M.M. Dub, A.K. Tkachenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 144-146. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2025-11-24T09:09:23Z |
| last_indexed |
2025-11-24T09:09:23Z |
| _version_ |
1849662230932488192 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 144-146.
doi: 10.15407/spqeo18.02.144
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
144
PACS 73.40.Cg
Methodological aspects of measuring the resistivity of contacts
to high-resistance semiconductors
V.S. Slipokurov
1
, M.M. Dub
2
, A.K. Tkachenko
2
, Ya.Ya. Kudryk
1
1
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03650 Kyiv, Ukraine, e-mail: kudryk@isp.kiev.ua
2
I. Franko Zhitomir State University
Abstract. Proposed has been the method of formation a thermally stable ohmic contact
to the diamond without high-temperature annealing with the resistivity ~50 to
80 Ohm∙cm
2
when Rs = 3∙10
7
Ohm/ eing based on the analysis of correlation
dependence between the resistivity of contact and that of semiconductor for the
unannealed sample and the sample after rapid thermal annealing it has been shown that
variation of the contact resistance on the plate is related with that of semiconductor and
may be caused by inhomogeneity of the dopant distribution.
Keywords: ohmic contact, diamond, high-resistance semiconductors.
Manuscript received 04.11.14; revised version received 05.04.15; accepted for
publication 27.05.15; published online 08.06.15.
In this work, we consider the methodological aspects of
measuring the electrophysical parameters of high-
resistance ohmic contacts to semiconductors, using
ohmic contacts to diamond as an example. Natural and
artificial diamonds have a number of unique properties
such as high thermal conductivity, chemical and
radiation resistance, transparency from ultraviolet to
radio-frequency range, chemical, radiation resistance
and high mobility of the charge carriers. Diamond is a
promising material for high power microwave [1-3] and
optoelectronic devices, sensors of ionizing radiation,
ultraviolet detectors [4]. Developed have already been
the Schottky diodes based on diamond with the
operating temperature 700 °C, planar transistors with the
operating temperature 300 °C, FETs, light-emitting
devices [1]. An important element of the semiconductor
device is an ohmic contact system, development of
which is an essential step of creating technologies of
microelectronic devices based on new semiconductor
materials.
In this work, we propose to create an ohmic contact
to diamond on the basis of Ti-Au metallization by using
magnetron sputtering on a diamond substrate heated to
the temperature 350 °C, which allows to form the
contact directly during sputtering. Test specimens were
fabricated using bulk polycrystalline n-type diamond
grown on a silicon substrate. After growing the diamond
layer with the thickness of about 100 μm, silicon was
etched. The layered structure of Ti (60 nm) – Au
(100 nm) was deposited using magnetron sputtering on
the substrate heated to 350 °C in a single process cycle.
Studied were two types of samples: initial and after rapid
thermal annealing (RTA) in vacuum at 800 °C for 60 s.
Using the photolithographic process, the set of test
structures to determine the contact resistivity (ρc) was
created. Type of the test plate and template to determine
ρc is shown in Fig. 1. It was found the current-voltage
characteristic measured between these two contacts of
template before and after RTA was linear and
symmetrical (Fig. 2). For measuring the resistivity of
Au-Ti-C contacts, the transmission line method (TLM)
was used with linear geometry of contact pads. The
essence of this method is as follows: when current flows
between two ohmic contacts, the current density is not
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 144-146.
doi: 10.15407/spqeo18.02.144
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
145
a) b)
Fig. 1. Test plate (a) and template (b) to determine contact resistivity by using TLM. The sizes are in micrometers.
-10 -8 -6 -4 -2 0 2 4 6 8 10
-0.4
-0.2
0.0
0.2
0.4
I,
A
V, V
L
4
L
3
L
2
L
1
L
5 L
6
a)
-10 -8 -6 -4 -2 0 2 4 6 8 10
-6
-4
-2
0
2
4
6
L
4
L
3
L
2
L
1
L
5
I,
A
V, V
b)
L
6
Fig. 2. Current-voltage characteristics of the structure before (a) and after RTA at 800 °C for 60 s (b).
-60 -40 -20 0 20 40 60 80 100120140160
0
20
40
60
80
100
120
R
,
M
L, m
a)
2L
t
10
7
10
8
10
0
10
1
10
2
10
3
before annealing
after RTA 800 °С, 60 s
c
,
·c
m
2
R
s
, /
b)
Fig. 3. Determination of the resistivity of contacts and that of semiconductor for the case of Au-Ti-C by using the dependences
of the total resistance on a distance between the contacts (a) and correlation dependences of the contact resistance and that of
semiconductor before (open marks) and after RTA 800 °C for 60 s (filled marks) (b).
uniformly distributed along the contact length S, but
decreases exponentially from the edge deep into the
contact. For large values of S, the current through the
contact will not depend on S, but it will be determined
by the characteristic length of current transfer deep into
the contact, the so-called transfer length (Lt). Under this
condition the resistance between two rectangular
contacts can be written as [5]:
W
RL
W
LR
R
ss ti
i 2 ,
where Rs is the surface resistance of semiconductor
between the contacts, sct RL , Li is the distance
between the contacts (see Fig. 1b). After plotting the
dependence R = f
(Li), using the slope of the straight line,
we calculate Rs (Fig. 3a). A line segment intercepted on
the x-axis by extrapolation to R = 0 of the dependence
R = f
(Li) is equal to 2Lt , where the contact resistivity
sc RL
t
2 .
Both in the sample without annealing and in the
annealed one, strong variation of the contact resistivity is
observed. In order to identify the reasons for this
variation, we will plot the correlation dependences
between resistivity of the contact and that of
semiconductor for unannealed and processed RTA
samples (Fig. 3b). We see that in both cases there is a
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 144-146.
doi: 10.15407/spqeo18.02.144
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
146
significant positive correlation, which can be explained
by a common cause of the change in the resistivity of
contact and that of semiconductor – inhomogeneity of
doping the diamond substrate.
Fig. 2b shows that for the same values of the
substrate resistivity, the semiconductor resistivity is
substantially identical before and after annealing, which
can be explained by formation of a titanium carbide
phase already in the process of magnetron sputtering
titanium on the substrate heated to 350 °C. For example,
the same was observed in [6], where in the contact Ti-C
already at 300 °C annealing interfacial reactions occured
and a transition layer with the thickness 300 nm was
formed. In the work [7], the beginning of the interfacial
reactions was fixed at 400 °C.
Thus, we have proposed the method to form ohmic
contacts to diamond without high-temperature annealing,
which is resistant to rapid thermal annealing at 800 °C
for 60 s. As a result of measuring the contact resistance
by using the TLM at room temperature, we has obtained
value of ρc ~50 to 80 Ohm∙cm
2
at Rs = 3∙10
7
Ohm/
References
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J.L. Davidson, Diamond semiconductor technology
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