Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors

• Datum: 2015
• Hauptverfasser: Slipokurov, V.S., Dub, M.M., Tkachenko, A.K., Kudryk, Ya.Ya.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Schriftenreihe: Semiconductor Physics Quantum Electronics & Optoelectronics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121806
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors / V.S. Slipokurov, M.M. Dub, A.K. Tkachenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 144-146. — Бібліогр.: 7 назв. — англ.

Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor f...