Radiation-stimulated processes in silicon structures with contacts based on TiN
The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, t...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2015 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121819 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Radiation-stimulated processes in silicon structureswith contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 220-225. — Бібліогр.: 25 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862630996872003584 |
|---|---|
| author | Nasyrov, M.U. Ataubaeva, A.B. |
| author_facet | Nasyrov, M.U. Ataubaeva, A.B. |
| citation_txt | Radiation-stimulated processes in silicon structureswith contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 220-225. — Бібліогр.: 25 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, the grain size reduction with increasing the fluence, the increase of dislocation density and microstrains.
|
| first_indexed | 2025-11-30T11:06:10Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121819 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T11:06:10Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Nasyrov, M.U. Ataubaeva, A.B. 2017-06-18T10:43:17Z 2017-06-18T10:43:17Z 2015 Radiation-stimulated processes in silicon structureswith contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 220-225. — Бібліогр.: 25 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.02.220 PACS 61.80.-x https://nasplib.isofts.kiev.ua/handle/123456789/121819 The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, the grain size reduction with increasing the fluence, the increase of dislocation density and microstrains. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Radiation-stimulated processes in silicon structures with contacts based on TiN Article published earlier |
| spellingShingle | Radiation-stimulated processes in silicon structures with contacts based on TiN Nasyrov, M.U. Ataubaeva, A.B. |
| title | Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_full | Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_fullStr | Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_full_unstemmed | Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_short | Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_sort | radiation-stimulated processes in silicon structures with contacts based on tin |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121819 |
| work_keys_str_mv | AT nasyrovmu radiationstimulatedprocessesinsiliconstructureswithcontactsbasedontin AT ataubaevaab radiationstimulatedprocessesinsiliconstructureswithcontactsbasedontin |