Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2015
• Hauptverfasser: Bacherikov, Yu.Yu., Zhuk, A.G., Okhrimenko, O.B., Kardashov, D.L., Kozitskiy, S.V., Kidalov, V.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121820
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS / Yu.Yu. Bacherikov, A.G. Zhuk, O.B. Okhrimenko, D.L. Kardashov, S.V. Kozitskiy, V.V. Kidalov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 226-229. — Бібліогр.: 25 назв. — англ.

The influence of annealing at 350 °C in air atmosphere on the luminescent characteristics of powdered ZnS: Mn obtained by self-propagating high-temperature synthesis has been studied. It was shown that variation in material heating rate due to changes in the annealing temperature results in differen...