Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile s...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Zitieren: | Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique / A.P. Shapovalov, I.V. Korotash, E.M. Rudenko, F.F. Sizov, D.S. Dubyna, L.S. Osipov, D.Yu. Polotskiy, Z.F. Tsybrii, A.A. Korchovyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 117-122. — Бібліогр.: 18 назв. — англ. |
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| author | Shapovalov, A.P. Korotash, I.V. Rudenko, E.M. Sizov, F.F. Dubyna, D.S. Osipov, L.S. Polotskiy, D.Yu. Tsybrii, Z.F. Korchovyi, A.A. |
| author_facet | Shapovalov, A.P. Korotash, I.V. Rudenko, E.M. Sizov, F.F. Dubyna, D.S. Osipov, L.S. Polotskiy, D.Yu. Tsybrii, Z.F. Korchovyi, A.A. |
| citation_txt | Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique / A.P. Shapovalov, I.V. Korotash, E.M. Rudenko, F.F. Sizov, D.S. Dubyna, L.S. Osipov, D.Yu. Polotskiy, Z.F. Tsybrii, A.A. Korchovyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 117-122. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile substrates, significantly increasing the deposition rate. A study of spectral properties of AlN films (reflection and transmission spectra within the range 2…25 µm) has been carried out by using the infrared Fourier spectrometer Spectrum BX-II. It has been shown that the obtained composite structures (AlN coatings on teflon and mylar substrates) could be used as passive filters in the infrared spectral range.
|
| first_indexed | 2025-12-07T17:24:35Z |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 117-122.
doi: 10.15407/spqeo18.02.117
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
117
PACS 52.77.Dq, 73.61.Ey, 73.61.Jc, 78.40.Pg, 78.66.Fd
Structure and optical properties of AlN films obtained
using the cathodic arc plasma deposition technique
A.P. Shapovalov
1
, I.V. Korotash
1
, E.M. Rudenko
1*
, F.F. Sizov
2
, D.S. Dubyna
1
, L.S. Osipov
1
,
D.Yu. Polotskiy
1
, Z.F. Tsybrii
2
, A.A. Korchovyi
2
1
G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine,
36, Academician Vernadsky Blvd., 03680 Kyiv, Ukraine,
Phone/fax: +38(044) 424-3432;
*
e-mail: rudenko@imp.kiev.ua
2
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine,
Phone/fax: +38(044) 525-6296, e-mail: sizov@isp.kiev.ua
Abstract. Aluminum nitride (AlN) film coatings have been obtained by a new technique
of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered
arc plasma deposition technique with a treatment in RF plasma of helicon discharge
allowed us to deposit AlN coatings on thermolabile substrates, significantly increasing
the deposition rate. A study of spectral properties of AlN films (reflection and
transmission spectra within the range 2…25 µm) has been carried out by using the
infrared Fourier spectrometer Spectrum BX-II. It has been shown that the obtained
composite structures (AlN coatings on teflon and mylar substrates) could be used as
passive filters in the infrared spectral range.
Keywords: AlN films, coatings on polymeric materials, optical properties, cathodic arc
plasma deposition technique.
Manuscript received 19.11.14; revised version received 19.03.15; accepted for
publication 27.05.15; published online 08.06.15.
1. Introduction
Over the past few years, a number of group III metal
nitrides (AlN, InN and GaN, etc.) have been attracting
considerable attention of researchers as objects for the
fundamental study, and also as base materials for
optoelectronics [1-4]. AlN coatings demonstrate a huge
potential for their application in high-power electronic
devices. Similar to Al2O3 and HfO2, AlN has a high
dielectric constant, low dielectric losses and high
breakdown voltage. Therefore, it is typically used as a
gate dielectric or an insulating layer responsible for the
elimination of parasitic currents [5, 6]. Furthermore, AlN
is one of the few non-metallic solids with high thermal
conductivity (up to 320 W/m·K at 25 °C) [6]. These
properties make AlN a very promising material for
absorption and conduction of the heat generated in
microelectronic devices. At the same time, aluminum
nitride has a high chemical resistance and good
mechanical properties (hardness of ~18 GPa) [7].
To obtain AlN films, conventional deposition
techniques such as alternating (AC) and direct current
(DC) reactive magnetron sputtering, laser ablation,
molecular beam epitaxy (MBE) and many others have
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 117-122.
doi: 10.15407/spqeo18.02.117
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
118
been widely used [8-14]. In comparison with these
techniques, a cathodic arc plasma deposition technology
with magnetic filtration of plasma flow, which has been
developing by the authors, has certain advantages
associated with universality of the method, low
temperature of the deposition process and high rate of
coatings condensation. In contrast to standard “BULAT”
type industrial facility for cathodic arc plasma
deposition, our original combined facility allows us to
carry out an efficient separation of a droplet component
of the sputtering flow from the end surface of the
cathode, using magnetic system with a bent
configuration of the magnetic field. A magnetic filtration
allows us to achieve a high content of the high-energy
(15 to 50 eV) ionic component in the plasma flow
directed to a substrate, as well as to separate the
microdroplet component. The temperature of the
synthesis of dense films under such conditions could be
reduced down to the room one. The control of the
position of the deflected flow through an adjustment of
the current of magnetic system and substrate rotation
system enables us to achieve uniform coatings on
samples with the diameter up to 150 mm.
The possibility to combine this technique with
specific features of the helicon source of RF-plasma
treatment gave us an opportunity to realize AlN films
deposition on various substrates, including the
thermolabile ones (different polymers) and to carry out
the study of structural and optical properties of films
obtained.
To improve characteristics of radio astronomy
receivers, production of barrier filters in the middle
infrared (mid-IR) spectral range is required. At the same
time, these filters must be fabricated on dielectric
materials, which are traditionally used in the microwave
technology. Typically, this polymer material is Teflon
that has a low thermal conductivity (down to
0.25…1 W/m·K at 25 °C). As have been shown by our
research, a possible solution for this problem could be
combination of dielectric materials with high and low
thermal conductivity.
This paper presents results of the synthesis and
study of AlN film coatings on thin flexible thermolabile
polymer substrates (teflon and mylar) and on single-
crystal silicon substrates (n-Si). The structure of AlN
films has been studied. Transmission and reflection
spectra of composite structures “AlN film on a
substrate” have been obtained in the mid-IR spectra (2 to
25 µm). It has been shown that composite structures
“AlN film on the polymer substrate” could have
characteristics of barrier filter in the mid-IR spectra.
2. Experimental techniques for obtaining and study
of AlN films
To obtain AlN films on various substrates, an original
combined ion-plasma facility based on helicon and
magnetic-filtered arc plasma sources (MFAPS) was used
[15]. Technological chamber of the reactor consists of a
discharge chamber of the helicon source (with diameter
and height of 20 cm) and a drift chamber (with diameter
of 35 cm and height of 25 cm). A discharge was excited
by planar antenna with diameter of 11 cm, which was
connected via a device matching to the RF generator
with the frequency of 13.56 MHz and with the power up
to 1 kW in the presence of argon or a reactive gas at the
pressure close to 7…8 mTorr. The MFAPS module was
attached to the end of the drift chamber. The substrate
holder, in which the electric potential could vary within
the range 0…100 V was placed at the bottom of the drift
chamber. A more detailed description of our facility
could be found in Ref. [15].
It is known that teflon is chemically inert, and
adhesion of metal films to its surface is hindered due to
the low surface energy (saturated bonds of fluorine on
the surface). As was shown in Ref. [16], a significant
increase in adhesion of metal films to the teflon surface
could be achieved through a pre-sputtering of the
substrate surface by an ion beam before deposition. We
used this method to provide the adhesion of AlN films to
all our substrates. The following operations were carried
out without breaking the vacuum, consecutively:
1) treatment of the sample surface by plasma of the
helicon source at different potentials of a substrate in an
inert argon atmosphere; 2) film deposition on various
substrates, using magnetic-filtered arc plasma sources. A
single crystal silicon n-Si (100) and (111), as well as
polymeric films of mylar and teflon were used as
substrates. The use of single crystal substrates allowed
us to carry out model experiments for the study of
structural and optical properties of coatings. The use of
polymeric films of mylar and teflon as substrates
allowed us to estimate real potentiality of AlN coatings
for producing quasi-optical passive infrared (IR) filters.
The crystal structure of samples was studied by
using the X-ray diffractometer (XRD) STADIP (Stoe,
Germany) with copper radiation CuK. Angles at which
shooting of XRD patterns was carried out ranged
between 20° and 90°. To average the intensity of X-ray
reflection from a single-crystal substrate and a film on it,
the sample was rotated during the shooting around the
axis perpendicular to its plane. Surface morphology of
the films was investigated using the scanning probe
microscope NanoScope IIIa Dimension 3000
TM
in the
mode with the periodic contrast. Measurements were
carried out in the central area of samples by means of
serial silicon probes (NT-MDT, Russia) with the
nominal tip radius of 10 nm.
Reflection and transmission spectra in the mid-IR
spectral range were obtained by using the IR Fourier
spectrometer Spectrum BX-II (Perkin Elmer) based on a
single-beam scanning interferometer Dynascan with a
Ge/KBr beam distributor. A signal was recorded using
the DTGS-detector. The spectral resolution of the device
was not worse than 0.8 cm
–1
, and the signal/noise ratio
was higher than 15000/1. Built-in Sure Scan checking
system provided reliability of the performed
measurements.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 117-122.
doi: 10.15407/spqeo18.02.117
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
119
3. Study of the structure inherent
to the prepared AlN films
For the AlN films deposition, such single crystal
substrates as n-Si (100) and (111) were used. According
to the International Centre for Diffraction Data, the
following values of the position of main reflexes of AlN
films in the diffraction pattern were obtained, using
CuK1 radiation with = 0.15406 nm: (100) AlN –
33.36°, (002) AlN – 35.91° and (101) AlN – 38.03°,
with the relative intensity of reflections 999, 606 and
914, respectively. Fig. 1 shows the XRD pattern of the
AlN film deposited on the n-Si (100) substrate (curve 2),
in which no other reflections were observed except the
substrate ones (curve 1). We note the increase of the
background in the area of small angles, which indicates
the presence of an amorphous component in the film
structure. However, we could not unambiguously
exclude the presence of a crystalline phase, since the
(200) reflection of the n-Si substrate, which was at 33.2°
could coincide with the position of the (100) AlN
reflection (33.36°). Fig. 2 shows the XRD pattern of the
AlN film deposited on the n-Si (111) substrate, in which
all the main reflections of aluminum nitride films ((100)
AlN, (002) AlN and (101) AlN) are present. At the same
time, grains of (002) and (101) orientations are clearly
dominated. It should be noted that nucleation conditions
in the case of the deposition on the n-Si (100) substrate
will differ significantly from those in the case of the
deposition on the n-Si (111) one. Thus, we could assume
predominance of (100) AlN grains.
The study of surface morphology inherent to the
AlN films revealed a dense developed film surface,
which is typical for the condensation under significant
bombardment of growing condensate by high-energy
particles of plasma. As one can see in Fig. 3a, rounded-
shape nanosize grains are distributed uniformly over the
test area. Fig. 3b shows that the average height
difference between adjacent grains is 1.5…2.5 nm. At
the same time, Fig. 3c shows the statistical histogram of
average distances between the peaks in the range
between 30 and 50 nm.
Fig. 1. XRD patterns of the AlN film deposited on the n-Si
(100) (2) and n-Si (100) substrate (1).
Fig. 2. XRD pattern of the AlN film deposited on the n-Si
(111).
a)
b)
c)
Fig. 3. Three-dimensional image (a), cross-sectional profile (b)
and histogram of distance distribution (c) of the AlN film,
which were obtained using the scanning probe microscope
NanoScope IIIa Dimension 3000TM.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 117-122.
doi: 10.15407/spqeo18.02.117
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
120
4. Spectral properties of composite structures
in the mid-IR spectra
The study of the reflection and transmission spectra for
the composite structures of AlN films and obtained
substrates were carried out in the mid-IR spectra for the
wavelengths in the range from 2 to 25 μm. Further, for
the samples obtained we will use the following
notations: AlN (3-Si) is the AlN film with the thickness
3.3 μm deposited on the n-Si (100) substrate with the
thickness 0.4 mm; AlN (4-myl) – the AlN film with the
thickness 4.2 μm on the mylar substrate with the
thickness 40 μm; AlN (8-myl) – the AlN film with the
thickness 8.5 μm on the mylar substrate with the
thickness 40 μm; AlN (8-tefl) – the AlN film with the
thickness 8.5 μm on the teflon substrate with the
thickness 0.1 mm. Fig. 4 shows four reflection spectra
(for the selected scale (cm
–1
), the interference pattern for
curves that correspond to AlN (4-myl) and AlN (3-Si)
samples is more readable).
According to the laws of classical optics [17], the
relationship between a film thickness (d), refractive
index of the material of a film (n()), and values of
radiation wavelengths (1, 2) for which adjacent
maximum (or minimum) are observed in the interference
pattern, is determined as
2112
21
nn2
d . (1)
If we neglect the dependence of the refractive index
n() on the wavelength and use the average value of n,
the expression (1) could be re-written as:
21
21
n2
d . (2)
Fig. 4. The reflection spectra obtained for the samples (1) AlN
(3-Si), (2) AlN (4-myl), (3) AlN (8-myl), (4) AlN (8-tefl) in the
mid-IR spectral region.
Fig. 5. The transmission spectra obtained for the n-Si (100)
silicon substrate (1) and the AlN (3-Si) structure (2) in the mid-
IR spectral region.
As one can see in Fig. 4, the interference pattern is
clearly observed in two curves: (1) – AlN (3-Si) and (2)
– AlN (4-myl). Moreover, overlaying of two interference
patterns with different repetition periods occurs in the
curve (2) – AlN (4-myl)). The longer period is
associated with interference in the AlN film thickness
and with less repetition period in the underlayer of
mylar. We could estimate the film thickness using the
formula (2) and the refraction index of the AlN film (n =
1.928) obtained in Ref. [18], which was averaged in the
wavelength range 2.5 to 7.3 μm. Substituting values of
wavelengths 1, 2 for two adjacent maxima and minima
into (2), we obtain the following values of film
thicknesses: d = 3.26 μm and d = 3.39 μm, respectively.
The difference in the values associated with a dispersion
of the refractive index of the AlN film n, i.e. for more
accurate calculations we should use the formula (1)
instead of (2).
Fig. 5 shows the transmission spectra with
transparency values for the n-Si (100) substrate and the
AlN (3-Si) sample. The characteristic absorption band
associated with a transverse optical (TO) vibration of Al-
N bonds is present in the IR spectrum of the AlN(3-Si)
structure obtained. Broadening this band and the shift
(~705 cm
–1
) in comparison with that for crystalline AlN
(~670 cm
–1
) is typical for amorphous films and could be
associated with the presence of impurities in the form of
oxygen and carbon in the AlN films structure. We note
that outside the absorption band in the more high-energy
part of the spectrum of the AlN (3-Si) structure, an effect
of translucency is observed. An increase in the
transparency of the composite structure in comparison
with the transparency of the silicon substrate could be
associated with an increase in the AlN film roughness.
Analyzing the interference pattern, we could note that
the position of maxima and minima in accordance with
classical optics remains the same, but now they are
swapped.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 117-122.
doi: 10.15407/spqeo18.02.117
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
121
Fig. 6. The transmission spectra obtained for the mylar
substrate (1) and the AlN (4-myl) (2) and AlN (8-myl) (3)
structures in the mid-IR spectral region.
Fig. 7. The transmission spectra obtained for the teflon
substrate (1) and the AlN (8-tefl) (2) in the mid-IR spectral
region.
Figs. 6 and 7 show the comparative transmission
spectra of substrates (mylar with the thickness 40 μm
and teflon with the thickness 100 μm) as well as
composite structures of these substrates and AlN films.
It should be noted that in the entire range (2…25 μm),
the AlN amorphous film (with the thickness 4 to 8 μm)
improves properties of our composite structures
obstructing IR radiation (especially within the range 7.5
to 25 μm). The latter range determines the thermal
radiation band of bodies heated to room temperatures.
To estimate the efficiency of coatings obtained, let
us introduce the integrated transmission coefficient baT
for the AlN (4-myl); AlN (8-myl); AlN (8-tefl)
composite structures as well as mylar and teflon
substrates (before deposition). The integrated
transmission coefficient baT could be found from the
formula:
b
a
xba dxT
ab
T
1
, (3)
Table. Integrated transmission coefficients T7.5-25 and
extinction coefficients Kext for the composite structures
obtained.
Mylar
AlN
(4-myl)
AlN
(8-myl)
Teflon
AlN
(8-tefl)
T7.5-25
(%)
63.40 12.46 4.42 7.31 2.89
Kext 1.00 0.20 0.07 1.00 0.40
where a and b are limits of the spectral range studied (in
our case, a = 7.5 μm and b = 25 μm). Also, we introduce
the extinction coefficient Kext that is equal to the ratio of
the integrated transmission coefficient 255.7 T of the
composite structure to the integrated transmission
coefficient 255.7 T of its substrate. The results of 255.7 T
and Kext estimations are given in Table. Taking into
account a high thermal conductivity of AlN films, the
results obtained are an evidence of possible application
of these composite structures (AlN coatings on teflon
and mylar substrates) as passive filters in the IR spectral
range.
5. Conclusions
Technology for producing nano-disperse dense films of
aluminum nitride on various substrates, including
thermolabile polymeric films such as mylar and teflon
by magnetic-filtered cathodic arc plasma deposition
technique, has been developed. We provided a high level
of adhesion to chemically inert surfaces of polymeric
films by modifying the substrate surface through the pre-
sputtering in the RF-plasma of helicon discharge. The
low temperature mode of dense films deposition has
been provided by high-energy plasma particles, which
are emitted during the cathodic arc plasma deposition.
The complex of physical characteristics such as low
level of dielectric losses, high-level absorption in the
infrared spectral range and improved thermal conductive
properties provides the aluminum nitride coating-
polymer film (mylar or teflon) composite structures with
functional parameters necessary for producing quasi-
optical filter elements in the infrared spectral region.
The value of attenuation of IR radiation depends on
the AlN film thickness. Thus, deposition of AlN coating
with the thickness 4.2 μm on the mylar film (with the
thickness 40 μm) increased attenuation in the composite
structure “AlN film on the mylar substrate” by not less
than 5 times in the 7.5 to 25 μm range, while AlN
coating with the thickness 8.5 μm increased attenuation
by not less than 14 times in comparison with attenuation
in the mylar film within the same spectral range.
Deposition of AlN coating with the thickness
8.5 μm on the teflon film (with the thickness 100 μm)
increased attenuation in the composite structures “AlN
film on the teflon substrate” by not less than 2.5 times in
comparison with attenuation in the teflon film.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 117-122.
doi: 10.15407/spqeo18.02.117
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
122
The obtained results have shown that such
thermolabile polymeric films with AlN nanosize grains
coatings can be used for suppressing the noise level from
the background IR radiation within the range of 7.5 to
25 μm to improve characteristics of sub-THz and THz
receivers. Also, these AlN coatings on thermolabile
polymeric films are applicable for perceptibility decrease
of the objects radiation in the same spectral range.
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| id | nasplib_isofts_kiev_ua-123456789-121821 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:24:35Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Shapovalov, A.P. Korotash, I.V. Rudenko, E.M. Sizov, F.F. Dubyna, D.S. Osipov, L.S. Polotskiy, D.Yu. Tsybrii, Z.F. Korchovyi, A.A. 2017-06-18T10:44:03Z 2017-06-18T10:44:03Z 2015 Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique / A.P. Shapovalov, I.V. Korotash, E.M. Rudenko, F.F. Sizov, D.S. Dubyna, L.S. Osipov, D.Yu. Polotskiy, Z.F. Tsybrii, A.A. Korchovyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 117-122. — Бібліогр.: 18 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.02.117 PACS 52.77.Dq, 73.61.Ey, 73.61.Jc, 78.40.Pg, 78.66.Fd https://nasplib.isofts.kiev.ua/handle/123456789/121821 Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile substrates, significantly increasing the deposition rate. A study of spectral properties of AlN films (reflection and transmission spectra within the range 2…25 µm) has been carried out by using the infrared Fourier spectrometer Spectrum BX-II. It has been shown that the obtained composite structures (AlN coatings on teflon and mylar substrates) could be used as passive filters in the infrared spectral range. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique Article published earlier |
| spellingShingle | Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique Shapovalov, A.P. Korotash, I.V. Rudenko, E.M. Sizov, F.F. Dubyna, D.S. Osipov, L.S. Polotskiy, D.Yu. Tsybrii, Z.F. Korchovyi, A.A. |
| title | Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique |
| title_full | Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique |
| title_fullStr | Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique |
| title_full_unstemmed | Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique |
| title_short | Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique |
| title_sort | structure and optical properties of aln films obtained using the cathodic arc plasma deposition technique |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121821 |
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