Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique

Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile s...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2015
Hauptverfasser: Shapovalov, A.P., Korotash, I.V., Rudenko, E.M., Sizov, F.F., Dubyna, D.S., Osipov, L.S., Polotskiy, D.Yu., Tsybrii, Z.F., Korchovyi, A.A.
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Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121821
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique / A.P. Shapovalov, I.V. Korotash, E.M. Rudenko, F.F. Sizov, D.S. Dubyna, L.S. Osipov, D.Yu. Polotskiy, Z.F. Tsybrii, A.A. Korchovyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 117-122. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Shapovalov, A.P.
Korotash, I.V.
Rudenko, E.M.
Sizov, F.F.
Dubyna, D.S.
Osipov, L.S.
Polotskiy, D.Yu.
Tsybrii, Z.F.
Korchovyi, A.A.
author_facet Shapovalov, A.P.
Korotash, I.V.
Rudenko, E.M.
Sizov, F.F.
Dubyna, D.S.
Osipov, L.S.
Polotskiy, D.Yu.
Tsybrii, Z.F.
Korchovyi, A.A.
citation_txt Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique / A.P. Shapovalov, I.V. Korotash, E.M. Rudenko, F.F. Sizov, D.S. Dubyna, L.S. Osipov, D.Yu. Polotskiy, Z.F. Tsybrii, A.A. Korchovyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 117-122. — Бібліогр.: 18 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile substrates, significantly increasing the deposition rate. A study of spectral properties of AlN films (reflection and transmission spectra within the range 2…25 µm) has been carried out by using the infrared Fourier spectrometer Spectrum BX-II. It has been shown that the obtained composite structures (AlN coatings on teflon and mylar substrates) could be used as passive filters in the infrared spectral range.
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publishDate 2015
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Shapovalov, A.P.
Korotash, I.V.
Rudenko, E.M.
Sizov, F.F.
Dubyna, D.S.
Osipov, L.S.
Polotskiy, D.Yu.
Tsybrii, Z.F.
Korchovyi, A.A.
2017-06-18T10:44:03Z
2017-06-18T10:44:03Z
2015
Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique / A.P. Shapovalov, I.V. Korotash, E.M. Rudenko, F.F. Sizov, D.S. Dubyna, L.S. Osipov, D.Yu. Polotskiy, Z.F. Tsybrii, A.A. Korchovyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 117-122. — Бібліогр.: 18 назв. — англ.
1560-8034
DOI: 10.15407/spqeo18.02.117
PACS 52.77.Dq, 73.61.Ey, 73.61.Jc, 78.40.Pg, 78.66.Fd
https://nasplib.isofts.kiev.ua/handle/123456789/121821
Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile substrates, significantly increasing the deposition rate. A study of spectral properties of AlN films (reflection and transmission spectra within the range 2…25 µm) has been carried out by using the infrared Fourier spectrometer Spectrum BX-II. It has been shown that the obtained composite structures (AlN coatings on teflon and mylar substrates) could be used as passive filters in the infrared spectral range.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
Article
published earlier
spellingShingle Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
Shapovalov, A.P.
Korotash, I.V.
Rudenko, E.M.
Sizov, F.F.
Dubyna, D.S.
Osipov, L.S.
Polotskiy, D.Yu.
Tsybrii, Z.F.
Korchovyi, A.A.
title Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
title_full Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
title_fullStr Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
title_full_unstemmed Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
title_short Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
title_sort structure and optical properties of aln films obtained using the cathodic arc plasma deposition technique
url https://nasplib.isofts.kiev.ua/handle/123456789/121821
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