Zn and Mn impurity effect on electron and luminescent properties of porous silicon

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2005
• Hauptverfasser: Primachenko, V.E, Kirillova, S.I., Manoilov, E.G., Kizyak, I.M., Bulakh, B.M., Chernobai, V.A., Venger, E.F.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121864
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Zn and Mn impurity effect on electron and luminescent properties of porous silicon/ V.E. Primachenko, S.I. Kirillova, E.G. Manoilov, I.M. Kizyak, B.M. Bulakh, V.A. Chernobai, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 5-13. — Бібліогр.: 20 назв. — англ.

Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of nanoelements in the above structures is substituted by a silicate one. Measureme...