Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2015 |
| ISSN: | 0132-6414 |
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2015
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/122039 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862727121443487744 |
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| author | Charikova, T. Okulov, V. Gubkin, A. Lugovikh, A. Moiseev, K. Nevedomsky, V. Kudriavtsev, Yu. Gallardo, S. Lopez, M. |
| author_facet | Charikova, T. Okulov, V. Gubkin, A. Lugovikh, A. Moiseev, K. Nevedomsky, V. Kudriavtsev, Yu. Gallardo, S. Lopez, M. |
| citation_txt | Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.
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| first_indexed | 2025-12-07T19:01:25Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-122039 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T19:01:25Z |
| publishDate | 2015 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
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| spelling | Charikova, T. Okulov, V. Gubkin, A. Lugovikh, A. Moiseev, K. Nevedomsky, V. Kudriavtsev, Yu. Gallardo, S. Lopez, M. 2017-06-26T05:11:20Z 2017-06-26T05:11:20Z 2015 Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ. 0132-6414 PACS: 72.80.Ey, 75.50.Pp https://nasplib.isofts.kiev.ua/handle/123456789/122039 The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found. This work was done within RAS Program (project No. 12-P-2-1018) with partial support of RFBR (grant No. 15-02-08909). Authors from Cinvestav thank to SENER and CONACYT, both from Mexico for a financial support of this study, grant No. 152244. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур XX Уральская международная зимняя школа по физике полупроводников Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese Article published earlier |
| spellingShingle | Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese Charikova, T. Okulov, V. Gubkin, A. Lugovikh, A. Moiseev, K. Nevedomsky, V. Kudriavtsev, Yu. Gallardo, S. Lopez, M. XX Уральская международная зимняя школа по физике полупроводников |
| title | Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese |
| title_full | Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese |
| title_fullStr | Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese |
| title_full_unstemmed | Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese |
| title_short | Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese |
| title_sort | magnetization in aiiibv semiconductor heterostructures with the depletion layer of manganese |
| topic | XX Уральская международная зимняя школа по физике полупроводников |
| topic_facet | XX Уральская международная зимняя школа по физике полупроводников |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/122039 |
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