Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

• Published in: Физика низких температур
• Date: 2015
• Main Authors: Charikova, T., Okulov, V., Gubkin, A., Lugovikh, A., Moiseev, K., Nevedomsky, V., Kudriavtsev, Yu., Gallardo, S., Lopez, M.
• Format: Article
• Language: English
• Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2015
• Subjects: XX Уральская международная зимняя школа по физике полупроводников
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/122039
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ.

The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The...