Microwave detectors based on the spin-torque diode effect

• Published in: Физика низких температур
• Date: 2015
• Main Authors: Prokopenko, O.V., Slavin, A.N.
• Format: Article
• Language: English
• Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2015
• Subjects: К 70-летию со дня рождения В. М. Локтева
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/122070
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Microwave detectors based on the spin-torque diode effect / O.V. Prokopenko, A.N. Slavin // Физика низких температур. — 2015. — Т. 41, № 5. — С. 457-465. — Бібліогр.: 27 назв. — англ.

The spin-transfer torque (STT) effect provides a new method of manipulation of magnetization in nanoscale objects. The STT effect manifests itself as a transfer of spin angular momentum between the parallel magnetic layers separated by a nonmagnetic spacer and traversed by a dc electric current. The transfer of the spin angular momentum from one layer to another could result in the excitation of the microwave-frequency magnetization dynamics in one of the magnetic layers. On the other hand, when a magnetization dynamics is excited in a magnetic layered structure by an external microwave signal both the structure electrical resistance and current through the structure will acquire microwave components resulting in the appearance of a rectified dc voltage on the magnetic structure. This “spin-torque diode effect” can be used for the development of ultra-sensitive spintorque microwave detectors (STMD). Below we present a brief review of our recent work on the general properties of STMDs, analyze the performance of the “resonance-type” and “threshold-type STMD” and consider the possible applications for such microwave detectors.