Исследование электрических и магнитных характеристик высокотемпературных датчиков Холла на основе гетеро-структуры AlGaN/GaN
Представлены результаты исследований характеристик датчика Холла предложенной конструкции на основе гетероструктуры AlGaN/GaN с различными геометрическими параметрами активной области, функционирующего в диапазоне температуры от –25 до 400°C. Исследования выполнены с использованием программных средс...
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| Published in: | Технология и конструирование в электронной аппаратуре |
|---|---|
| Date: | 2017 |
| Main Authors: | Стемпицкий, В.Р., Дао Динь Ха |
| Format: | Article |
| Language: | Russian |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/122667 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Исследование электрических и магнитных характеристик высокотемпературных датчиков Холла на основе гетеро-структуры AlGaN/GaN / В.Р. Стемпицкий, Дао Динь Ха // Технология и конструирование в электронной аппаратуре. — 2017. — № 1-2. — С. 28-32. — Бібліогр.: 12 назв. — рос. |
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