Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility
The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor 1
 has been investigated in p-type Ge/Ge₁₋xSix heterostructures with εFτ/h ≈ 1. Scaling analysis is
 carried out for both the low- and high-field transition point. In low magnetic fields ωcτ &l...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2007 |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2007
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility / Yu.G Arapov, G.I. Harus, I.V. Karskanov, V.N. Neverov, N.G.Shelushinina, M.V. Yakunin // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 207-210. — Бібліогр.: 22 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862568779239653376 |
|---|---|
| author | Arapov, Yu.G. Harus, G.I. Karskanov, I.V. Neverov, V.N. Shelushinina, N.G. Yakunin, M.V. |
| author_facet | Arapov, Yu.G. Harus, G.I. Karskanov, I.V. Neverov, V.N. Shelushinina, N.G. Yakunin, M.V. |
| citation_txt | Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility / Yu.G Arapov, G.I. Harus, I.V. Karskanov, V.N. Neverov, N.G.Shelushinina, M.V. Yakunin // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 207-210. — Бібліогр.: 22 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor 1
has been investigated in p-type Ge/Ge₁₋xSix heterostructures with εFτ/h ≈ 1. Scaling analysis is
carried out for both the low- and high-field transition point. In low magnetic fields ωcτ < 1 pronounced
QH-like peculiarities for ν = 1 are also observed in both the longitudinal and Hall
resistivities. Such behavior may be evidence of a localization effect in the mixing region of Landau
levels and is inherent for two-dimensional structures in a vicinity of the metal—insulator transition.
|
| first_indexed | 2025-11-26T01:39:33Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-127532 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-11-26T01:39:33Z |
| publishDate | 2007 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Arapov, Yu.G. Harus, G.I. Karskanov, I.V. Neverov, V.N. Shelushinina, N.G. Yakunin, M.V. 2017-12-23T21:28:25Z 2017-12-23T21:28:25Z 2007 Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility / Yu.G Arapov, G.I. Harus, I.V. Karskanov, V.N. Neverov, N.G.Shelushinina, M.V. Yakunin // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 207-210. — Бібліогр.: 22 назв. — англ. 0132-6414 PACS: 73.40.–c, 73.43.–f https://nasplib.isofts.kiev.ua/handle/123456789/127532 The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor 1
 has been investigated in p-type Ge/Ge₁₋xSix heterostructures with εFτ/h ≈ 1. Scaling analysis is
 carried out for both the low- and high-field transition point. In low magnetic fields ωcτ < 1 pronounced
 QH-like peculiarities for ν = 1 are also observed in both the longitudinal and Hall
 resistivities. Such behavior may be evidence of a localization effect in the mixing region of Landau
 levels and is inherent for two-dimensional structures in a vicinity of the metal—insulator transition. The work was supported by: Russian Foundation
 for Basic Research RFBR, grants 05-02-16206 and
 04-02-16614; program of Russian Academy of Sciences
 «Low-dimensional quantum heterostructures»; CRDF
 and Ministry of Education and Science of Russian
 Federation, grant Y1-P-05-14 (Ek-05 [X1]); Ural Division
 of Russian Academy of Sciences, grant for
 young scientists; Russian Science Support Foundation. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Электронные свойства низкоразмерных систем Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility Article published earlier |
| spellingShingle | Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility Arapov, Yu.G. Harus, G.I. Karskanov, I.V. Neverov, V.N. Shelushinina, N.G. Yakunin, M.V. Электронные свойства низкоразмерных систем |
| title | Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility |
| title_full | Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility |
| title_fullStr | Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility |
| title_full_unstemmed | Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility |
| title_short | Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility |
| title_sort | quantum hall effect in p-ge/ge₁₋xsix heterostructures with low hole mobility |
| topic | Электронные свойства низкоразмерных систем |
| topic_facet | Электронные свойства низкоразмерных систем |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/127532 |
| work_keys_str_mv | AT arapovyug quantumhalleffectinpgege1xsixheterostructureswithlowholemobility AT harusgi quantumhalleffectinpgege1xsixheterostructureswithlowholemobility AT karskanoviv quantumhalleffectinpgege1xsixheterostructureswithlowholemobility AT neverovvn quantumhalleffectinpgege1xsixheterostructureswithlowholemobility AT shelushininang quantumhalleffectinpgege1xsixheterostructureswithlowholemobility AT yakuninmv quantumhalleffectinpgege1xsixheterostructureswithlowholemobility |