Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility
The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor 1 has been investigated in p-type Ge/Ge₁₋xSix heterostructures with εFτ/h ≈ 1. Scaling analysis is carried out for both the low- and high-field transition point. In low magnetic fields ωcτ < 1 pronounced QH...
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| Date: | 2007 |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2007
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| Series: | Физика низких температур |
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/127532 |
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| Cite this: | Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility / Yu.G Arapov, G.I. Harus, I.V. Karskanov, V.N. Neverov, N.G.Shelushinina, M.V. Yakunin // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 207-210. — Бібліогр.: 22 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-1275322025-06-03T16:29:06Z Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility Arapov, Yu.G. Harus, G.I. Karskanov, I.V. Neverov, V.N. Shelushinina, N.G. Yakunin, M.V. Электронные свойства низкоразмерных систем The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor 1 has been investigated in p-type Ge/Ge₁₋xSix heterostructures with εFτ/h ≈ 1. Scaling analysis is carried out for both the low- and high-field transition point. In low magnetic fields ωcτ < 1 pronounced QH-like peculiarities for ν = 1 are also observed in both the longitudinal and Hall resistivities. Such behavior may be evidence of a localization effect in the mixing region of Landau levels and is inherent for two-dimensional structures in a vicinity of the metal—insulator transition. The work was supported by: Russian Foundation for Basic Research RFBR, grants 05-02-16206 and 04-02-16614; program of Russian Academy of Sciences «Low-dimensional quantum heterostructures»; CRDF and Ministry of Education and Science of Russian Federation, grant Y1-P-05-14 (Ek-05 [X1]); Ural Division of Russian Academy of Sciences, grant for young scientists; Russian Science Support Foundation. 2007 Article Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility / Yu.G Arapov, G.I. Harus, I.V. Karskanov, V.N. Neverov, N.G.Shelushinina, M.V. Yakunin // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 207-210. — Бібліогр.: 22 назв. — англ. 0132-6414 PACS: 73.40.–c, 73.43.–f https://nasplib.isofts.kiev.ua/handle/123456789/127532 en Физика низких температур application/pdf Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| language |
English |
| topic |
Электронные свойства низкоразмерных систем Электронные свойства низкоразмерных систем |
| spellingShingle |
Электронные свойства низкоразмерных систем Электронные свойства низкоразмерных систем Arapov, Yu.G. Harus, G.I. Karskanov, I.V. Neverov, V.N. Shelushinina, N.G. Yakunin, M.V. Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility Физика низких температур |
| description |
The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor 1
has been investigated in p-type Ge/Ge₁₋xSix heterostructures with εFτ/h ≈ 1. Scaling analysis is
carried out for both the low- and high-field transition point. In low magnetic fields ωcτ < 1 pronounced
QH-like peculiarities for ν = 1 are also observed in both the longitudinal and Hall
resistivities. Such behavior may be evidence of a localization effect in the mixing region of Landau
levels and is inherent for two-dimensional structures in a vicinity of the metal—insulator transition. |
| format |
Article |
| author |
Arapov, Yu.G. Harus, G.I. Karskanov, I.V. Neverov, V.N. Shelushinina, N.G. Yakunin, M.V. |
| author_facet |
Arapov, Yu.G. Harus, G.I. Karskanov, I.V. Neverov, V.N. Shelushinina, N.G. Yakunin, M.V. |
| author_sort |
Arapov, Yu.G. |
| title |
Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility |
| title_short |
Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility |
| title_full |
Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility |
| title_fullStr |
Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility |
| title_full_unstemmed |
Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility |
| title_sort |
quantum hall effect in p-ge/ge₁₋xsix heterostructures with low hole mobility |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2007 |
| topic_facet |
Электронные свойства низкоразмерных систем |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/127532 |
| citation_txt |
Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility / Yu.G Arapov, G.I. Harus, I.V. Karskanov, V.N. Neverov, N.G.Shelushinina, M.V. Yakunin // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 207-210. — Бібліогр.: 22 назв. — англ. |
| series |
Физика низких температур |
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2025-11-26T01:39:33Z |
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