Vertical spin transport in semiconductor heterostructures

• Veröffentlicht in: Физика низких температур
• Datum: 2007
• Hauptverfasser: Sankowski, P., Kacman, P., Majewski, J.A., Dietl, T.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2007
• Schlagworte: Структура и свойства полупроводников с переходными элементами
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/127727
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Vertical spin transport in semiconductor heterostructures / P. Sankowski, P. Kacman, J.A. Majewski, T. Dietl // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 256-262. — Бібліогр.: 34 назв. — англ.

The Landauer—B ttiker formalism combined with the tight-binding transfer matrix method is
 employed to model vertical coherent spin transport within magnetization modulated semiconductor
 heterostructures based on GaAs. This formalism provides excellent physical description of recent
 experiments concerning the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based
 trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both the
 TMR and the Zener spin current polarization, the calculated values compare well with those observed
 in the experiments and the formalism reproduces the strong decrease of the observed effects
 with external bias. We ascribe this decrease to the band structure effects. The role played in the
 spin dependent tunneling by carrier concentration and magnetic ion content is also studied.