Vertical spin transport in semiconductor heterostructures
The Landauer—B ttiker formalism combined with the tight-binding transfer matrix method is
 employed to model vertical coherent spin transport within magnetization modulated semiconductor
 heterostructures based on GaAs. This formalism provides excellent physical description of recent...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2007 |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2007
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Vertical spin transport in semiconductor heterostructures / P. Sankowski, P. Kacman, J.A. Majewski, T. Dietl // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 256-262. — Бібліогр.: 34 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862591250446680064 |
|---|---|
| author | Sankowski, P. Kacman, P. Majewski, J.A. Dietl, T. |
| author_facet | Sankowski, P. Kacman, P. Majewski, J.A. Dietl, T. |
| citation_txt | Vertical spin transport in semiconductor heterostructures / P. Sankowski, P. Kacman, J.A. Majewski, T. Dietl // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 256-262. — Бібліогр.: 34 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | The Landauer—B ttiker formalism combined with the tight-binding transfer matrix method is
employed to model vertical coherent spin transport within magnetization modulated semiconductor
heterostructures based on GaAs. This formalism provides excellent physical description of recent
experiments concerning the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based
trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both the
TMR and the Zener spin current polarization, the calculated values compare well with those observed
in the experiments and the formalism reproduces the strong decrease of the observed effects
with external bias. We ascribe this decrease to the band structure effects. The role played in the
spin dependent tunneling by carrier concentration and magnetic ion content is also studied.
|
| first_indexed | 2025-11-27T07:12:25Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-127727 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-11-27T07:12:25Z |
| publishDate | 2007 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Sankowski, P. Kacman, P. Majewski, J.A. Dietl, T. 2017-12-27T10:47:28Z 2017-12-27T10:47:28Z 2007 Vertical spin transport in semiconductor heterostructures / P. Sankowski, P. Kacman, J.A. Majewski, T. Dietl // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 256-262. — Бібліогр.: 34 назв. — англ. 0132-6414 PACS: 75.50.Pp, 72.25.Hg, 73.40.Gk https://nasplib.isofts.kiev.ua/handle/123456789/127727 The Landauer—B ttiker formalism combined with the tight-binding transfer matrix method is
 employed to model vertical coherent spin transport within magnetization modulated semiconductor
 heterostructures based on GaAs. This formalism provides excellent physical description of recent
 experiments concerning the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based
 trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both the
 TMR and the Zener spin current polarization, the calculated values compare well with those observed
 in the experiments and the formalism reproduces the strong decrease of the observed effects
 with external bias. We ascribe this decrease to the band structure effects. The role played in the
 spin dependent tunneling by carrier concentration and magnetic ion content is also studied. This work was partly supported by the EC project
 NANOSPIN (FP6-2002-IST-015728). Calculations
 were carried out using the resources and software at
 Interdisciplinary Center of Mathematical and Computer
 Modelling (ICM) in Warsaw. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Структура и свойства полупроводников с переходными элементами Vertical spin transport in semiconductor heterostructures Article published earlier |
| spellingShingle | Vertical spin transport in semiconductor heterostructures Sankowski, P. Kacman, P. Majewski, J.A. Dietl, T. Структура и свойства полупроводников с переходными элементами |
| title | Vertical spin transport in semiconductor heterostructures |
| title_full | Vertical spin transport in semiconductor heterostructures |
| title_fullStr | Vertical spin transport in semiconductor heterostructures |
| title_full_unstemmed | Vertical spin transport in semiconductor heterostructures |
| title_short | Vertical spin transport in semiconductor heterostructures |
| title_sort | vertical spin transport in semiconductor heterostructures |
| topic | Структура и свойства полупроводников с переходными элементами |
| topic_facet | Структура и свойства полупроводников с переходными элементами |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/127727 |
| work_keys_str_mv | AT sankowskip verticalspintransportinsemiconductorheterostructures AT kacmanp verticalspintransportinsemiconductorheterostructures AT majewskija verticalspintransportinsemiconductorheterostructures AT dietlt verticalspintransportinsemiconductorheterostructures |