Mechanisms of enhancement of light emission in nanostructures of II–VI compounds doped with manganese

Intra-shell transitions of transition metal and rare earth ions are parity forbidden processes.
 For Mn²⁺ ions this is also a spin forbidden process, i.e., light emission should be inefficient. Surprisingly,
 it was reported that in nanostructures of ZnMnS the ⁴T₁ to ⁶A₁ intra-shel...

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Veröffentlicht in:Физика низких температур
Datum:2007
Hauptverfasser: Godlewski, M., Yatsunenko, S., Ivanov, V.Yu., Drozdowicz-Tomsia, K., Goldys, E.M., Phillips, M.R., Klar, P.J., Heimbrodt, W.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2007
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/127728
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Zitieren:Mechanisms of enhancement of light emission in nanostructures of II–VI compounds doped with manganese / M. Godlewski, S. Yatsunenko, V.Yu. Ivanov, K. Drozdowicz-Tomsia, E.M. Goldys, M.R. Phillips, P.J. Klar, W. Heimbrodt // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 263-268. — Бібліогр.: 25 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Godlewski, M.
Yatsunenko, S.
Ivanov, V.Yu.
Drozdowicz-Tomsia, K.
Goldys, E.M.
Phillips, M.R.
Klar, P.J.
Heimbrodt, W.
author_facet Godlewski, M.
Yatsunenko, S.
Ivanov, V.Yu.
Drozdowicz-Tomsia, K.
Goldys, E.M.
Phillips, M.R.
Klar, P.J.
Heimbrodt, W.
citation_txt Mechanisms of enhancement of light emission in nanostructures of II–VI compounds doped with manganese / M. Godlewski, S. Yatsunenko, V.Yu. Ivanov, K. Drozdowicz-Tomsia, E.M. Goldys, M.R. Phillips, P.J. Klar, W. Heimbrodt // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 263-268. — Бібліогр.: 25 назв. — англ.
collection DSpace DC
container_title Физика низких температур
description Intra-shell transitions of transition metal and rare earth ions are parity forbidden processes.
 For Mn²⁺ ions this is also a spin forbidden process, i.e., light emission should be inefficient. Surprisingly,
 it was reported that in nanostructures of ZnMnS the ⁴T₁ to ⁶A₁ intra-shell transition of
 Mn²⁺ results in a bright photoluminescence characterized by a short PL decay time. The model of a
 quantum confined atom was introduced to explain the observed experimental results. It was later
 claimed that this model is incorrect. Based on the results of our photoluminescence, photoluminescence
 kinetics, time-resolved photoluminescence, electron spin resonance and optically
 detected magnetic resonance investigations we confirm photoluminescence enhancement and decrease
 of photoluminescence lifetime and relate these effects to spin dependent magnetic interactions
 between localized spins of Mn²⁺ ions and spins/magnetic moments of free carriers. This
 mechanism is active in both bulk and in low-dimensional structures, but is significantly enhanced
 in nanostructure samples.
first_indexed 2025-12-07T19:16:04Z
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publishDate 2007
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
record_format dspace
spelling Godlewski, M.
Yatsunenko, S.
Ivanov, V.Yu.
Drozdowicz-Tomsia, K.
Goldys, E.M.
Phillips, M.R.
Klar, P.J.
Heimbrodt, W.
2017-12-27T10:49:34Z
2017-12-27T10:49:34Z
2007
Mechanisms of enhancement of light emission in nanostructures of II–VI compounds doped with manganese / M. Godlewski, S. Yatsunenko, V.Yu. Ivanov, K. Drozdowicz-Tomsia, E.M. Goldys, M.R. Phillips, P.J. Klar, W. Heimbrodt // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 263-268. — Бібліогр.: 25 назв. — англ.
0132-6414
PACS: 81.07.Wx, 78.55.Et, 78.47.+p, 76.70.Hb
https://nasplib.isofts.kiev.ua/handle/123456789/127728
Intra-shell transitions of transition metal and rare earth ions are parity forbidden processes.
 For Mn²⁺ ions this is also a spin forbidden process, i.e., light emission should be inefficient. Surprisingly,
 it was reported that in nanostructures of ZnMnS the ⁴T₁ to ⁶A₁ intra-shell transition of
 Mn²⁺ results in a bright photoluminescence characterized by a short PL decay time. The model of a
 quantum confined atom was introduced to explain the observed experimental results. It was later
 claimed that this model is incorrect. Based on the results of our photoluminescence, photoluminescence
 kinetics, time-resolved photoluminescence, electron spin resonance and optically
 detected magnetic resonance investigations we confirm photoluminescence enhancement and decrease
 of photoluminescence lifetime and relate these effects to spin dependent magnetic interactions
 between localized spins of Mn²⁺ ions and spins/magnetic moments of free carriers. This
 mechanism is active in both bulk and in low-dimensional structures, but is significantly enhanced
 in nanostructure samples.
This work was partly supported by grant No 1 P03B 090 30 of MEiN, Poland
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Структура и свойства полупроводников с переходными элементами
Mechanisms of enhancement of light emission in nanostructures of II–VI compounds doped with manganese
Article
published earlier
spellingShingle Mechanisms of enhancement of light emission in nanostructures of II–VI compounds doped with manganese
Godlewski, M.
Yatsunenko, S.
Ivanov, V.Yu.
Drozdowicz-Tomsia, K.
Goldys, E.M.
Phillips, M.R.
Klar, P.J.
Heimbrodt, W.
Структура и свойства полупроводников с переходными элементами
title Mechanisms of enhancement of light emission in nanostructures of II–VI compounds doped with manganese
title_full Mechanisms of enhancement of light emission in nanostructures of II–VI compounds doped with manganese
title_fullStr Mechanisms of enhancement of light emission in nanostructures of II–VI compounds doped with manganese
title_full_unstemmed Mechanisms of enhancement of light emission in nanostructures of II–VI compounds doped with manganese
title_short Mechanisms of enhancement of light emission in nanostructures of II–VI compounds doped with manganese
title_sort mechanisms of enhancement of light emission in nanostructures of ii–vi compounds doped with manganese
topic Структура и свойства полупроводников с переходными элементами
topic_facet Структура и свойства полупроводников с переходными элементами
url https://nasplib.isofts.kiev.ua/handle/123456789/127728
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