Plasma wave resonant detection of terahertz radiations by nanometric transistors
We report on resonant terahertz detection by two-dimensional electron plasma located in
 nanometric InGaAs and GaN transistors. Up to now, the biggest part of the research was devoted
 to GaAs-based devices as the most promising from the point of view of the electron mobility. The&am...
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| Published in: | Физика низких температур |
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| Date: | 2007 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/127738 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Plasma wave resonant detection of terahertz radiations by nanometric transistors / W. Knap, A. El Fatimy, J. Torres, F. Teppe, M. Orlov, V. Gavrilenko // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 388-391. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862716098395242496 |
|---|---|
| author | Knap, W. El Fatimy, A. Torres, J. Teppe, F. Orlov, M. Gavrilenko, V. |
| author_facet | Knap, W. El Fatimy, A. Torres, J. Teppe, F. Orlov, M. Gavrilenko, V. |
| citation_txt | Plasma wave resonant detection of terahertz radiations by nanometric transistors / W. Knap, A. El Fatimy, J. Torres, F. Teppe, M. Orlov, V. Gavrilenko // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 388-391. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | We report on resonant terahertz detection by two-dimensional electron plasma located in
nanometric InGaAs and GaN transistors. Up to now, the biggest part of the research was devoted
to GaAs-based devices as the most promising from the point of view of the electron mobility. The
resonant detection was reported, however, only in the sub-THz range. According to predictions of
the Dyakonov–Shur plasma wave detection theory an increase of the detection frequency can be
achieved by reducing the length or increase the carrier density in the gated region.We demonstrate
that the 1THz limit can be overcome by using ultimately short gate InGaAs and GaN nanotransistors.
For the first time the tunability of the resonant signal by the applied gate voltage is
demonstrated. We show that the physical mechanism of the detection is related to the plasma
waves excited in the transistor channel (Dyakonov–Shur theory). We also show that by increasing
of the drain-to-source current leads to a transformation of the broadband detection to a resonant
and tuneable one. We can get resonant detection at room temperature. We finally discuss the possible
application of detection by nanotransistors in different types of THz spectroscopy research.
|
| first_indexed | 2025-12-07T18:02:20Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-127738 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T18:02:20Z |
| publishDate | 2007 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Knap, W. El Fatimy, A. Torres, J. Teppe, F. Orlov, M. Gavrilenko, V. 2017-12-27T14:45:22Z 2017-12-27T14:45:22Z 2007 Plasma wave resonant detection of terahertz radiations by nanometric transistors / W. Knap, A. El Fatimy, J. Torres, F. Teppe, M. Orlov, V. Gavrilenko // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 388-391. — Бібліогр.: 18 назв. — англ. 0132-6414 PACS: 73.21.–b, 73.22.–f, 73.23.Ad, 73.50.Fq https://nasplib.isofts.kiev.ua/handle/123456789/127738 We report on resonant terahertz detection by two-dimensional electron plasma located in
 nanometric InGaAs and GaN transistors. Up to now, the biggest part of the research was devoted
 to GaAs-based devices as the most promising from the point of view of the electron mobility. The
 resonant detection was reported, however, only in the sub-THz range. According to predictions of
 the Dyakonov–Shur plasma wave detection theory an increase of the detection frequency can be
 achieved by reducing the length or increase the carrier density in the gated region.We demonstrate
 that the 1THz limit can be overcome by using ultimately short gate InGaAs and GaN nanotransistors.
 For the first time the tunability of the resonant signal by the applied gate voltage is
 demonstrated. We show that the physical mechanism of the detection is related to the plasma
 waves excited in the transistor channel (Dyakonov–Shur theory). We also show that by increasing
 of the drain-to-source current leads to a transformation of the broadband detection to a resonant
 and tuneable one. We can get resonant detection at room temperature. We finally discuss the possible
 application of detection by nanotransistors in different types of THz spectroscopy research. We are grateful also to Yahya Meziani, Edmundas
 Sirmulis, and Zigmas Martunas for their kind assistance
 during the experiments and enlightening discussions.
 The work of Montpellier group and collaboration
 with Vilnius group were supported by
 CNRS–GDR project «Semiconductor sources and detectors
 of THz frequencies», region of Languedoc
 Rousillon and French Ministry of Research and New
 Technologies through the ACI grant NR0091.
 The collaboration between Montpellier and Vilnius
 is supported by the projects PRAMA via the programme
 «Centres of Excellence». The research conducted
 at Vilnius was performed under the topic
 «Study of semiconductor nanostructures for terahertz
 technologies» (No.144.1).
 The collaboration between Montpellier and Nizhny
 Novgorod is supported by RFBR (grants 05-02-17374,
 05-02-22001) and CNRS. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Новые электронные материалы и системы Plasma wave resonant detection of terahertz radiations by nanometric transistors Article published earlier |
| spellingShingle | Plasma wave resonant detection of terahertz radiations by nanometric transistors Knap, W. El Fatimy, A. Torres, J. Teppe, F. Orlov, M. Gavrilenko, V. Новые электронные материалы и системы |
| title | Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_full | Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_fullStr | Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_full_unstemmed | Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_short | Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_sort | plasma wave resonant detection of terahertz radiations by nanometric transistors |
| topic | Новые электронные материалы и системы |
| topic_facet | Новые электронные материалы и системы |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/127738 |
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