Plasma wave resonant detection of terahertz radiations by nanometric transistors
We report on resonant terahertz detection by two-dimensional electron plasma located in nanometric InGaAs and GaN transistors. Up to now, the biggest part of the research was devoted to GaAs-based devices as the most promising from the point of view of the electron mobility. The resonant detectio...
Gespeichert in:
| Veröffentlicht in: | Физика низких температур |
|---|---|
| Datum: | 2007 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2007
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/127738 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Plasma wave resonant detection of terahertz radiations by nanometric transistors / W. Knap, A. El Fatimy, J. Torres, F. Teppe, M. Orlov, V. Gavrilenko // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 388-391. — Бібліогр.: 18 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-127738 |
|---|---|
| record_format |
dspace |
| spelling |
Knap, W. El Fatimy, A. Torres, J. Teppe, F. Orlov, M. Gavrilenko, V. 2017-12-27T14:45:22Z 2017-12-27T14:45:22Z 2007 Plasma wave resonant detection of terahertz radiations by nanometric transistors / W. Knap, A. El Fatimy, J. Torres, F. Teppe, M. Orlov, V. Gavrilenko // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 388-391. — Бібліогр.: 18 назв. — англ. 0132-6414 PACS: 73.21.–b, 73.22.–f, 73.23.Ad, 73.50.Fq https://nasplib.isofts.kiev.ua/handle/123456789/127738 We report on resonant terahertz detection by two-dimensional electron plasma located in nanometric InGaAs and GaN transistors. Up to now, the biggest part of the research was devoted to GaAs-based devices as the most promising from the point of view of the electron mobility. The resonant detection was reported, however, only in the sub-THz range. According to predictions of the Dyakonov–Shur plasma wave detection theory an increase of the detection frequency can be achieved by reducing the length or increase the carrier density in the gated region.We demonstrate that the 1THz limit can be overcome by using ultimately short gate InGaAs and GaN nanotransistors. For the first time the tunability of the resonant signal by the applied gate voltage is demonstrated. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel (Dyakonov–Shur theory). We also show that by increasing of the drain-to-source current leads to a transformation of the broadband detection to a resonant and tuneable one. We can get resonant detection at room temperature. We finally discuss the possible application of detection by nanotransistors in different types of THz spectroscopy research. We are grateful also to Yahya Meziani, Edmundas Sirmulis, and Zigmas Martunas for their kind assistance during the experiments and enlightening discussions. The work of Montpellier group and collaboration with Vilnius group were supported by CNRS–GDR project «Semiconductor sources and detectors of THz frequencies», region of Languedoc Rousillon and French Ministry of Research and New Technologies through the ACI grant NR0091. The collaboration between Montpellier and Vilnius is supported by the projects PRAMA via the programme «Centres of Excellence». The research conducted at Vilnius was performed under the topic «Study of semiconductor nanostructures for terahertz technologies» (No.144.1). The collaboration between Montpellier and Nizhny Novgorod is supported by RFBR (grants 05-02-17374, 05-02-22001) and CNRS. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Новые электронные материалы и системы Plasma wave resonant detection of terahertz radiations by nanometric transistors Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| spellingShingle |
Plasma wave resonant detection of terahertz radiations by nanometric transistors Knap, W. El Fatimy, A. Torres, J. Teppe, F. Orlov, M. Gavrilenko, V. Новые электронные материалы и системы |
| title_short |
Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_full |
Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_fullStr |
Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_full_unstemmed |
Plasma wave resonant detection of terahertz radiations by nanometric transistors |
| title_sort |
plasma wave resonant detection of terahertz radiations by nanometric transistors |
| author |
Knap, W. El Fatimy, A. Torres, J. Teppe, F. Orlov, M. Gavrilenko, V. |
| author_facet |
Knap, W. El Fatimy, A. Torres, J. Teppe, F. Orlov, M. Gavrilenko, V. |
| topic |
Новые электронные материалы и системы |
| topic_facet |
Новые электронные материалы и системы |
| publishDate |
2007 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
We report on resonant terahertz detection by two-dimensional electron plasma located in
nanometric InGaAs and GaN transistors. Up to now, the biggest part of the research was devoted
to GaAs-based devices as the most promising from the point of view of the electron mobility. The
resonant detection was reported, however, only in the sub-THz range. According to predictions of
the Dyakonov–Shur plasma wave detection theory an increase of the detection frequency can be
achieved by reducing the length or increase the carrier density in the gated region.We demonstrate
that the 1THz limit can be overcome by using ultimately short gate InGaAs and GaN nanotransistors.
For the first time the tunability of the resonant signal by the applied gate voltage is
demonstrated. We show that the physical mechanism of the detection is related to the plasma
waves excited in the transistor channel (Dyakonov–Shur theory). We also show that by increasing
of the drain-to-source current leads to a transformation of the broadband detection to a resonant
and tuneable one. We can get resonant detection at room temperature. We finally discuss the possible
application of detection by nanotransistors in different types of THz spectroscopy research.
|
| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/127738 |
| citation_txt |
Plasma wave resonant detection of terahertz radiations by nanometric transistors / W. Knap, A. El Fatimy, J. Torres, F. Teppe, M. Orlov, V. Gavrilenko // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 388-391. — Бібліогр.: 18 назв. — англ. |
| work_keys_str_mv |
AT knapw plasmawaveresonantdetectionofterahertzradiationsbynanometrictransistors AT elfatimya plasmawaveresonantdetectionofterahertzradiationsbynanometrictransistors AT torresj plasmawaveresonantdetectionofterahertzradiationsbynanometrictransistors AT teppef plasmawaveresonantdetectionofterahertzradiationsbynanometrictransistors AT orlovm plasmawaveresonantdetectionofterahertzradiationsbynanometrictransistors AT gavrilenkov plasmawaveresonantdetectionofterahertzradiationsbynanometrictransistors |
| first_indexed |
2025-12-07T18:02:20Z |
| last_indexed |
2025-12-07T18:02:20Z |
| _version_ |
1850873521792614401 |