Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods
The thermal conductivity of three single crystal samples of n-type gallium nitride with electron densities of
 4.0⋅10¹⁶, 2.6⋅10¹⁸, and 1.1⋅10²⁰ cm⁻³ has been determined in the temperature range 4–320 K. The measurements
 were carried out within the ab plane using the stationary meth...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2015 |
| ISSN: | 0132-6414 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2015
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/127954 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods / O. Churiukova, A. Jeżowski, P. Stachowiak, J. Mucha, Z. Litwicki, P. Perlin and T. Suski // Физика низких температур. — 2015. — Т. 41, № 7. — С. 725-728. — Бібліогр.: 9 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The thermal conductivity of three single crystal samples of n-type gallium nitride with electron densities of
4.0⋅10¹⁶, 2.6⋅10¹⁸, and 1.1⋅10²⁰ cm⁻³ has been determined in the temperature range 4–320 K. The measurements
were carried out within the ab plane using the stationary method. The thermal conductivity depends strongly on
the donor concentration. The analysis within the Callaway approach and the Debye model shows a significant influence
of phonon–electron scattering on the thermal conductivity of the samples. In addition, some preliminary
results obtained along the c axes of GaN layered samples are presented. The latter measurements have been carried
out using the 3ω method.
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| ISSN: | 0132-6414 |