Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods
The thermal conductivity of three single crystal samples of n-type gallium nitride with electron densities of
 4.0⋅10¹⁶, 2.6⋅10¹⁸, and 1.1⋅10²⁰ cm⁻³ has been determined in the temperature range 4–320 K. The measurements
 were carried out within the ab plane using the stationary meth...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2015 |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2015
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| Zitieren: | Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods / O. Churiukova, A. Jeżowski, P. Stachowiak, J. Mucha, Z. Litwicki, P. Perlin and T. Suski // Физика низких температур. — 2015. — Т. 41, № 7. — С. 725-728. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862707695725838336 |
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| author | Churiukova, O. Jeżowski, A. Stachowiak, P. Mucha, J. Litwick, Z. Perlin, P. Susk, T. |
| author_facet | Churiukova, O. Jeżowski, A. Stachowiak, P. Mucha, J. Litwick, Z. Perlin, P. Susk, T. |
| citation_txt | Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods / O. Churiukova, A. Jeżowski, P. Stachowiak, J. Mucha, Z. Litwicki, P. Perlin and T. Suski // Физика низких температур. — 2015. — Т. 41, № 7. — С. 725-728. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | The thermal conductivity of three single crystal samples of n-type gallium nitride with electron densities of
4.0⋅10¹⁶, 2.6⋅10¹⁸, and 1.1⋅10²⁰ cm⁻³ has been determined in the temperature range 4–320 K. The measurements
were carried out within the ab plane using the stationary method. The thermal conductivity depends strongly on
the donor concentration. The analysis within the Callaway approach and the Debye model shows a significant influence
of phonon–electron scattering on the thermal conductivity of the samples. In addition, some preliminary
results obtained along the c axes of GaN layered samples are presented. The latter measurements have been carried
out using the 3ω method.
|
| first_indexed | 2025-12-07T17:06:50Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-127954 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T17:06:50Z |
| publishDate | 2015 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Churiukova, O. Jeżowski, A. Stachowiak, P. Mucha, J. Litwick, Z. Perlin, P. Susk, T. 2017-12-31T16:34:28Z 2017-12-31T16:34:28Z 2015 Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods / O. Churiukova, A. Jeżowski, P. Stachowiak, J. Mucha, Z. Litwicki, P. Perlin and T. Suski // Физика низких температур. — 2015. — Т. 41, № 7. — С. 725-728. — Бібліогр.: 9 назв. — англ. 0132-6414 PACS: 44.10.+i, 63.20.kd, 68.60.Dv https://nasplib.isofts.kiev.ua/handle/123456789/127954 The thermal conductivity of three single crystal samples of n-type gallium nitride with electron densities of
 4.0⋅10¹⁶, 2.6⋅10¹⁸, and 1.1⋅10²⁰ cm⁻³ has been determined in the temperature range 4–320 K. The measurements
 were carried out within the ab plane using the stationary method. The thermal conductivity depends strongly on
 the donor concentration. The analysis within the Callaway approach and the Debye model shows a significant influence
 of phonon–electron scattering on the thermal conductivity of the samples. In addition, some preliminary
 results obtained along the c axes of GaN layered samples are presented. The latter measurements have been carried
 out using the 3ω method. The work was supported by Wroclaw Research Centre
 EIT+ within the project “The Application of Nanotechnology
 in Advanced Materials” — NanoMat (POIG.01.01.02-
 02-002/08) co-financed by the European Regional Development
 Fund (operational Programme Innovative Economy,
 1.1.2). en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур 10th International Conference on Cryocrystals and Quantum Crystals (Final part) Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods Article published earlier |
| spellingShingle | Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods Churiukova, O. Jeżowski, A. Stachowiak, P. Mucha, J. Litwick, Z. Perlin, P. Susk, T. 10th International Conference on Cryocrystals and Quantum Crystals (Final part) |
| title | Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods |
| title_full | Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods |
| title_fullStr | Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods |
| title_full_unstemmed | Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods |
| title_short | Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods |
| title_sort | thermal conductivity of donor-doped gan measured with 3ω and stationary methods |
| topic | 10th International Conference on Cryocrystals and Quantum Crystals (Final part) |
| topic_facet | 10th International Conference on Cryocrystals and Quantum Crystals (Final part) |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/127954 |
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