Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods
The thermal conductivity of three single crystal samples of n-type gallium nitride with electron densities of 4.0⋅10¹⁶, 2.6⋅10¹⁸, and 1.1⋅10²⁰ cm⁻³ has been determined in the temperature range 4–320 K. The measurements were carried out within the ab plane using the stationary method. The thermal...
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| Published in: | Физика низких температур |
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| Date: | 2015 |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2015
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/127954 |
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| Cite this: | Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods / O. Churiukova, A. Jeżowski, P. Stachowiak, J. Mucha, Z. Litwicki, P. Perlin and T. Suski // Физика низких температур. — 2015. — Т. 41, № 7. — С. 725-728. — Бібліогр.: 9 назв. — англ. |
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Churiukova, O. Jeżowski, A. Stachowiak, P. Mucha, J. Litwick, Z. Perlin, P. Susk, T. 2017-12-31T16:34:28Z 2017-12-31T16:34:28Z 2015 Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods / O. Churiukova, A. Jeżowski, P. Stachowiak, J. Mucha, Z. Litwicki, P. Perlin and T. Suski // Физика низких температур. — 2015. — Т. 41, № 7. — С. 725-728. — Бібліогр.: 9 назв. — англ. 0132-6414 PACS: 44.10.+i, 63.20.kd, 68.60.Dv https://nasplib.isofts.kiev.ua/handle/123456789/127954 The thermal conductivity of three single crystal samples of n-type gallium nitride with electron densities of 4.0⋅10¹⁶, 2.6⋅10¹⁸, and 1.1⋅10²⁰ cm⁻³ has been determined in the temperature range 4–320 K. The measurements were carried out within the ab plane using the stationary method. The thermal conductivity depends strongly on the donor concentration. The analysis within the Callaway approach and the Debye model shows a significant influence of phonon–electron scattering on the thermal conductivity of the samples. In addition, some preliminary results obtained along the c axes of GaN layered samples are presented. The latter measurements have been carried out using the 3ω method. The work was supported by Wroclaw Research Centre EIT+ within the project “The Application of Nanotechnology in Advanced Materials” — NanoMat (POIG.01.01.02- 02-002/08) co-financed by the European Regional Development Fund (operational Programme Innovative Economy, 1.1.2). en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур 10th International Conference on Cryocrystals and Quantum Crystals (Final part) Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods |
| spellingShingle |
Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods Churiukova, O. Jeżowski, A. Stachowiak, P. Mucha, J. Litwick, Z. Perlin, P. Susk, T. 10th International Conference on Cryocrystals and Quantum Crystals (Final part) |
| title_short |
Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods |
| title_full |
Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods |
| title_fullStr |
Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods |
| title_full_unstemmed |
Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods |
| title_sort |
thermal conductivity of donor-doped gan measured with 3ω and stationary methods |
| author |
Churiukova, O. Jeżowski, A. Stachowiak, P. Mucha, J. Litwick, Z. Perlin, P. Susk, T. |
| author_facet |
Churiukova, O. Jeżowski, A. Stachowiak, P. Mucha, J. Litwick, Z. Perlin, P. Susk, T. |
| topic |
10th International Conference on Cryocrystals and Quantum Crystals (Final part) |
| topic_facet |
10th International Conference on Cryocrystals and Quantum Crystals (Final part) |
| publishDate |
2015 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
The thermal conductivity of three single crystal samples of n-type gallium nitride with electron densities of
4.0⋅10¹⁶, 2.6⋅10¹⁸, and 1.1⋅10²⁰ cm⁻³ has been determined in the temperature range 4–320 K. The measurements
were carried out within the ab plane using the stationary method. The thermal conductivity depends strongly on
the donor concentration. The analysis within the Callaway approach and the Debye model shows a significant influence
of phonon–electron scattering on the thermal conductivity of the samples. In addition, some preliminary
results obtained along the c axes of GaN layered samples are presented. The latter measurements have been carried
out using the 3ω method.
|
| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/127954 |
| citation_txt |
Thermal conductivity of donor-doped GaN measured with 3ω and stationary methods / O. Churiukova, A. Jeżowski, P. Stachowiak, J. Mucha, Z. Litwicki, P. Perlin and T. Suski // Физика низких температур. — 2015. — Т. 41, № 7. — С. 725-728. — Бібліогр.: 9 назв. — англ. |
| work_keys_str_mv |
AT churiukovao thermalconductivityofdonordopedganmeasuredwith3ωandstationarymethods AT jezowskia thermalconductivityofdonordopedganmeasuredwith3ωandstationarymethods AT stachowiakp thermalconductivityofdonordopedganmeasuredwith3ωandstationarymethods AT muchaj thermalconductivityofdonordopedganmeasuredwith3ωandstationarymethods AT litwickz thermalconductivityofdonordopedganmeasuredwith3ωandstationarymethods AT perlinp thermalconductivityofdonordopedganmeasuredwith3ωandstationarymethods AT suskt thermalconductivityofdonordopedganmeasuredwith3ωandstationarymethods |
| first_indexed |
2025-12-07T17:06:50Z |
| last_indexed |
2025-12-07T17:06:50Z |
| _version_ |
1850870030166654976 |