Effect of step-edge on spectral properties and planar stability of metallic bigraphene

Phonon and electron spectra of metallic bigraphene are analyzed in the presence of step-edge crystal imperfection.
 Different geometries of step-edge are considered. The dynamic planar stability of the considered structure is
 proved for temperatures above the ambient. The number of...

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Veröffentlicht in:Физика низких температур
Datum:2016
Hauptverfasser: Eremenko, V.V., Sirenko, V.A., Gospodarev, I.A., Syrkin, E.S., Feodosyev, S.B., Bondar, I.S., Saxena, S.S., Feher, A., Minakova, K.A.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2016
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/128460
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Effect of step-edge on spectral properties and planar stability of metallic bigraphene / V.V. Eremenko, V.A. Sirenko, I.A. Gospodarev, E.S. Syrkin, S.B. Feodosyev, I.S. Bondar, S.S. Saxena, A. Feher, and K.A. Minakova // Физика низких температур. — 2016. — Т. 42, № 2. — С. 134–141 . — Бібліогр.: 34 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Beschreibung
Zusammenfassung:Phonon and electron spectra of metallic bigraphene are analyzed in the presence of step-edge crystal imperfection.
 Different geometries of step-edge are considered. The dynamic planar stability of the considered structure is
 proved for temperatures above the ambient. The number of phonon states is shown to grow near the K-point of the
 first Brillouin zone, compared to pristine graphene. It is found, that this type of defects causes substantially nonuniform
 distribution of electron states and the pronounced increase in the number of states with energies close to
 Fermi energy can be expected in electron spectrum of the graphene-based compounds. The performed calculations
 are in good agreement with inelastic neutron, x-ray and Raman measurements.
ISSN:0132-6414