Low temperature electron transport on semiconductor surfaces
The low temperature electron transport on semiconductor surfaces has been studied using an ultra high vacuum, variable temperature Scanning Tunneling Microscope (STM). The STM I(V) spectroscopy recorded at various temperatures has enabled to investigate the temperature dependence (300 K to 35 K) of...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2003 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2003
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/128815 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Low temperature electron transport on semiconductor surfaces / M. Lastapis, D. Riedel, A. Mayne, K. Bobrov, G. Dujardin // Физика низких температур. — 2003. — Т. 29, № 3. — С. 263-269. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862600400385867776 |
|---|---|
| author | Lastapis, M. Riedel, D. Mayne, A. Bobrov, K. Dujardin, G. |
| author_facet | Lastapis, M. Riedel, D. Mayne, A. Bobrov, K. Dujardin, G. |
| citation_txt | Low temperature electron transport on semiconductor surfaces / M. Lastapis, D. Riedel, A. Mayne, K. Bobrov, G. Dujardin // Физика низких температур. — 2003. — Т. 29, № 3. — С. 263-269. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | The low temperature electron transport on semiconductor surfaces has been studied using an ultra high vacuum, variable temperature Scanning Tunneling Microscope (STM). The STM I(V) spectroscopy recorded at various temperatures has enabled to investigate the temperature dependence (300 K to 35 K) of the surface conductivity of three different semiconductor surfaces: highly doped n-type Si(100), p-type Si(100), and hydrogenated C(100). Low temperature freezing of specific surface electronic channels on the higly doped n-type Si(100) and moderately doped p-type Si(100) surfaces could be achieved whereas the total surface conductivity on the hydrogenated C(100) surface can be frozen below only 180 K.
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| first_indexed | 2025-11-27T23:57:22Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-128815 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-11-27T23:57:22Z |
| publishDate | 2003 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Lastapis, M. Riedel, D. Mayne, A. Bobrov, K. Dujardin, G. 2018-01-14T09:03:18Z 2018-01-14T09:03:18Z 2003 Low temperature electron transport on semiconductor surfaces / M. Lastapis, D. Riedel, A. Mayne, K. Bobrov, G. Dujardin // Физика низких температур. — 2003. — Т. 29, № 3. — С. 263-269. — Бібліогр.: 9 назв. — англ. 0132-6414 PACS: 72.20.Jv https://nasplib.isofts.kiev.ua/handle/123456789/128815 The low temperature electron transport on semiconductor surfaces has been studied using an ultra high vacuum, variable temperature Scanning Tunneling Microscope (STM). The STM I(V) spectroscopy recorded at various temperatures has enabled to investigate the temperature dependence (300 K to 35 K) of the surface conductivity of three different semiconductor surfaces: highly doped n-type Si(100), p-type Si(100), and hydrogenated C(100). Low temperature freezing of specific surface electronic channels on the higly doped n-type Si(100) and moderately doped p-type Si(100) surfaces could be achieved whereas the total surface conductivity on the hydrogenated C(100) surface can be frozen below only 180 K. We wish to thank the European IST-FET «Bottom-up-Nanomachines» (BUN) and the European «Atomic and Molecular Manipulation; a new tool In Science and Technology» (AMMIST) network. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Electronically Induced Phenomena: Low Temperature Aspects Low temperature electron transport on semiconductor surfaces Article published earlier |
| spellingShingle | Low temperature electron transport on semiconductor surfaces Lastapis, M. Riedel, D. Mayne, A. Bobrov, K. Dujardin, G. Electronically Induced Phenomena: Low Temperature Aspects |
| title | Low temperature electron transport on semiconductor surfaces |
| title_full | Low temperature electron transport on semiconductor surfaces |
| title_fullStr | Low temperature electron transport on semiconductor surfaces |
| title_full_unstemmed | Low temperature electron transport on semiconductor surfaces |
| title_short | Low temperature electron transport on semiconductor surfaces |
| title_sort | low temperature electron transport on semiconductor surfaces |
| topic | Electronically Induced Phenomena: Low Temperature Aspects |
| topic_facet | Electronically Induced Phenomena: Low Temperature Aspects |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/128815 |
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