Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001)

• Published in: Физика низких температур
• Date: 2003
• Main Authors: Faradzhev, N.S., Kusmierek, D.O., Yakshinskiy, B.V., Madey, T.E.
• Format: Article
• Language: English
• Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2003
• Subjects: Electronically Induced Phenomena: Low Temperature Aspects
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/128817
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) / N.S. Faradzhev, D.O. Kusmierek, B.V. Yakshinskiy, T.E. Madey // Физика низких температур. — 2003. — Т. 29, № 3. — С. 286-295. — Бібліогр.: 34 назв. — англ.

Electron stimulated desorption ion angular distribution (ESDIAD) and temperature programmed desorption (TPD) techniques have been employed to study radiation-induced decomposition of fractional monolayer SF₆ films physisorbed on Ru(0001) at 25 K. Our focus is on the origin of F⁺ and F⁻ ions, which dominate ESD from fractional monolayers. F⁻ ions escape only in off-normal directions and originate from undissociated molecules. The origins of F⁺ ions are more complicated. The F⁺ ions from electron stimulated desorption of molecularly adsorbed SF₆ desorb in off-normal directions, in symmetric ESDIAD patterns. Electron beam exposure leads to formation of SFx (x = 0 - 5) fragments, which become the source of positive ions in normal and off-normal directions. Electron exposure > 10¹⁶ cm⁻ ² results in decomposition of the entire adsorbed SF₆ layer.