Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001)
Electron stimulated desorption ion angular distribution (ESDIAD) and temperature programmed desorption (TPD) techniques have been employed to study radiation-induced decomposition of fractional monolayer SF₆ films physisorbed on Ru(0001) at 25 K. Our focus is on the origin of F⁺ and F⁻ ions, which d...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2003 |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2003
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| Zitieren: | Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) / N.S. Faradzhev, D.O. Kusmierek, B.V. Yakshinskiy, T.E. Madey // Физика низких температур. — 2003. — Т. 29, № 3. — С. 286-295. — Бібліогр.: 34 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862750775248158720 |
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| author | Faradzhev, N.S. Kusmierek, D.O. Yakshinskiy, B.V. Madey, T.E. |
| author_facet | Faradzhev, N.S. Kusmierek, D.O. Yakshinskiy, B.V. Madey, T.E. |
| citation_txt | Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) / N.S. Faradzhev, D.O. Kusmierek, B.V. Yakshinskiy, T.E. Madey // Физика низких температур. — 2003. — Т. 29, № 3. — С. 286-295. — Бібліогр.: 34 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | Electron stimulated desorption ion angular distribution (ESDIAD) and temperature programmed desorption (TPD) techniques have been employed to study radiation-induced decomposition of fractional monolayer SF₆ films physisorbed on Ru(0001) at 25 K. Our focus is on the origin of F⁺ and F⁻ ions, which dominate ESD from fractional monolayers. F⁻ ions escape only in off-normal directions and originate from undissociated molecules. The origins of F⁺ ions are more complicated. The F⁺ ions from electron stimulated desorption of molecularly adsorbed SF₆ desorb in off-normal directions, in symmetric ESDIAD patterns. Electron beam exposure leads to formation of SFx (x = 0 - 5) fragments, which become the source of positive ions in normal and off-normal directions. Electron exposure > 10¹⁶ cm⁻ ² results in decomposition of the entire adsorbed SF₆ layer.
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| first_indexed | 2025-12-07T21:07:24Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-128817 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T21:07:24Z |
| publishDate | 2003 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
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| spelling | Faradzhev, N.S. Kusmierek, D.O. Yakshinskiy, B.V. Madey, T.E. 2018-01-14T09:05:41Z 2018-01-14T09:05:41Z 2003 Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) / N.S. Faradzhev, D.O. Kusmierek, B.V. Yakshinskiy, T.E. Madey // Физика низких температур. — 2003. — Т. 29, № 3. — С. 286-295. — Бібліогр.: 34 назв. — англ. 0132-6414 PACS: 79.20.La https://nasplib.isofts.kiev.ua/handle/123456789/128817 Electron stimulated desorption ion angular distribution (ESDIAD) and temperature programmed desorption (TPD) techniques have been employed to study radiation-induced decomposition of fractional monolayer SF₆ films physisorbed on Ru(0001) at 25 K. Our focus is on the origin of F⁺ and F⁻ ions, which dominate ESD from fractional monolayers. F⁻ ions escape only in off-normal directions and originate from undissociated molecules. The origins of F⁺ ions are more complicated. The F⁺ ions from electron stimulated desorption of molecularly adsorbed SF₆ desorb in off-normal directions, in symmetric ESDIAD patterns. Electron beam exposure leads to formation of SFx (x = 0 - 5) fragments, which become the source of positive ions in normal and off-normal directions. Electron exposure > 10¹⁶ cm⁻ ² results in decomposition of the entire adsorbed SF₆ layer. We acknowledge valuable discussions with Prof. E. Carter. This work has been supported in part by the US National Science Foundation, Grant No. CHE 0075995. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Electronically Induced Phenomena: Low Temperature Aspects Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) Article published earlier |
| spellingShingle | Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) Faradzhev, N.S. Kusmierek, D.O. Yakshinskiy, B.V. Madey, T.E. Electronically Induced Phenomena: Low Temperature Aspects |
| title | Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) |
| title_full | Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) |
| title_fullStr | Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) |
| title_full_unstemmed | Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) |
| title_short | Effects of electron irradiation on structure and bonding of SF₆ on Ru(0001) |
| title_sort | effects of electron irradiation on structure and bonding of sf₆ on ru(0001) |
| topic | Electronically Induced Phenomena: Low Temperature Aspects |
| topic_facet | Electronically Induced Phenomena: Low Temperature Aspects |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/128817 |
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