Exciton-induced lattice defect formation
The lattice defect formation in solid Ne induced by electronic excitation was studied using the selective vacuum ultraviolet spectroscopy method. The samples were excited with synchrotron radiation in the range of excitonic absorption n = 2Г(3/2). The dose dependence of the intensity distribution in...
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| Опубліковано в: : | Физика низких температур |
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| Дата: | 2003 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2003
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/128823 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Exciton-induced lattice defect formation / E.V. Savchenko, A.N. Ogurtsov, G. Zimmerer // Физика низких температур. — 2003. — Т. 29, № 3. — С. 356-360. — Бібліогр.: 26 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862591252803878912 |
|---|---|
| author | Savchenko, E.V. Ogurtsov, A.N. Zimmerer, G. |
| author_facet | Savchenko, E.V. Ogurtsov, A.N. Zimmerer, G. |
| citation_txt | Exciton-induced lattice defect formation / E.V. Savchenko, A.N. Ogurtsov, G. Zimmerer // Физика низких температур. — 2003. — Т. 29, № 3. — С. 356-360. — Бібліогр.: 26 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | The lattice defect formation in solid Ne induced by electronic excitation was studied using the selective vacuum ultraviolet spectroscopy method. The samples were excited with synchrotron radiation in the range of excitonic absorption n = 2Г(3/2). The dose dependence of the intensity distribution in the band of atomic type self-trapped exciton luminescence was analyzed. A direct evidence of the formation and accumulation of point lattice defects in solid Ne via the excitonic mechanism was obtained for the first time. The model of the permanent lattice defect formation is discussed.
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| first_indexed | 2025-11-27T07:13:11Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-128823 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-11-27T07:13:11Z |
| publishDate | 2003 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Savchenko, E.V. Ogurtsov, A.N. Zimmerer, G. 2018-01-14T09:17:33Z 2018-01-14T09:17:33Z 2003 Exciton-induced lattice defect formation / E.V. Savchenko, A.N. Ogurtsov, G. Zimmerer // Физика низких температур. — 2003. — Т. 29, № 3. — С. 356-360. — Бібліогр.: 26 назв. — англ. 0132-6414 PACS: 61.82.Ms, 71.35.-y, 78.55.Hx https://nasplib.isofts.kiev.ua/handle/123456789/128823 The lattice defect formation in solid Ne induced by electronic excitation was studied using the selective vacuum ultraviolet spectroscopy method. The samples were excited with synchrotron radiation in the range of excitonic absorption n = 2Г(3/2). The dose dependence of the intensity distribution in the band of atomic type self-trapped exciton luminescence was analyzed. A direct evidence of the formation and accumulation of point lattice defects in solid Ne via the excitonic mechanism was obtained for the first time. The model of the permanent lattice defect formation is discussed. It is a pleasure to thank Prof. A.K. Song for fruitful discussions. The authors (E.S. and A.O.) gratefully acknowledge the support by DFG. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Electronically Induced Phenomena: Low Temperature Aspects Exciton-induced lattice defect formation Article published earlier |
| spellingShingle | Exciton-induced lattice defect formation Savchenko, E.V. Ogurtsov, A.N. Zimmerer, G. Electronically Induced Phenomena: Low Temperature Aspects |
| title | Exciton-induced lattice defect formation |
| title_full | Exciton-induced lattice defect formation |
| title_fullStr | Exciton-induced lattice defect formation |
| title_full_unstemmed | Exciton-induced lattice defect formation |
| title_short | Exciton-induced lattice defect formation |
| title_sort | exciton-induced lattice defect formation |
| topic | Electronically Induced Phenomena: Low Temperature Aspects |
| topic_facet | Electronically Induced Phenomena: Low Temperature Aspects |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/128823 |
| work_keys_str_mv | AT savchenkoev excitoninducedlatticedefectformation AT ogurtsovan excitoninducedlatticedefectformation AT zimmererg excitoninducedlatticedefectformation |