Exciton–polariton laser

We present a review of the investigations realized in the last decades of the phenomenon of the Bose–Einstein condensation (BEC) in the system of two-dimensional cavity polaritons in semiconductor nanostructures. The conditions at which the excitons interacting with cavity photons form new type of q...

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Veröffentlicht in:Физика низких температур
Datum:2016
Hauptverfasser: Moskalenko, S.A., Tiginyanu, I.M.
Format: Artikel
Sprache:English
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2016
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/129100
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Exciton–polariton laser / S.A. Moskalenko, I.M. Tiginyanu // Физика низких температур. — 2016. — Т. 42, № 5. — С. 426-437. — Бібліогр.: 64 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-129100
record_format dspace
spelling Moskalenko, S.A.
Tiginyanu, I.M.
2018-01-16T13:12:07Z
2018-01-16T13:12:07Z
2016
Exciton–polariton laser / S.A. Moskalenko, I.M. Tiginyanu // Физика низких температур. — 2016. — Т. 42, № 5. — С. 426-437. — Бібліогр.: 64 назв. — англ.
0132-6414
PACS: 71.35.–y, 71.36.+c
https://nasplib.isofts.kiev.ua/handle/123456789/129100
We present a review of the investigations realized in the last decades of the phenomenon of the Bose–Einstein condensation (BEC) in the system of two-dimensional cavity polaritons in semiconductor nanostructures. The conditions at which the excitons interacting with cavity photons form new type of quasiparticles named as polaritons are described. Since polaritons can form in a microcavity a weakly interacting Bose gas, similarly to the exciton gas in semiconductors, the microcavity exciton–polariton BEC emerged in the last decades as a new direction of the exciton BEC in solids, promising for practical applications. The high interest in BEC of exciton–polaritons in semiconductor microcavities is related to the ultra-low threshold lasing which has been demonstrat-ed, in particular, for an electrically injected polariton laser based on bulk GaN microcavity diode working at room temperature.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
К 100-летию со дня рождения К.Б. Толпыго
Exciton–polariton laser
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Exciton–polariton laser
spellingShingle Exciton–polariton laser
Moskalenko, S.A.
Tiginyanu, I.M.
К 100-летию со дня рождения К.Б. Толпыго
title_short Exciton–polariton laser
title_full Exciton–polariton laser
title_fullStr Exciton–polariton laser
title_full_unstemmed Exciton–polariton laser
title_sort exciton–polariton laser
author Moskalenko, S.A.
Tiginyanu, I.M.
author_facet Moskalenko, S.A.
Tiginyanu, I.M.
topic К 100-летию со дня рождения К.Б. Толпыго
topic_facet К 100-летию со дня рождения К.Б. Толпыго
publishDate 2016
language English
container_title Физика низких температур
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
format Article
description We present a review of the investigations realized in the last decades of the phenomenon of the Bose–Einstein condensation (BEC) in the system of two-dimensional cavity polaritons in semiconductor nanostructures. The conditions at which the excitons interacting with cavity photons form new type of quasiparticles named as polaritons are described. Since polaritons can form in a microcavity a weakly interacting Bose gas, similarly to the exciton gas in semiconductors, the microcavity exciton–polariton BEC emerged in the last decades as a new direction of the exciton BEC in solids, promising for practical applications. The high interest in BEC of exciton–polaritons in semiconductor microcavities is related to the ultra-low threshold lasing which has been demonstrat-ed, in particular, for an electrically injected polariton laser based on bulk GaN microcavity diode working at room temperature.
issn 0132-6414
url https://nasplib.isofts.kiev.ua/handle/123456789/129100
fulltext
citation_txt Exciton–polariton laser / S.A. Moskalenko, I.M. Tiginyanu // Физика низких температур. — 2016. — Т. 42, № 5. — С. 426-437. — Бібліогр.: 64 назв. — англ.
work_keys_str_mv AT moskalenkosa excitonpolaritonlaser
AT tiginyanuim excitonpolaritonlaser
first_indexed 2025-11-24T04:28:33Z
last_indexed 2025-11-24T04:28:33Z
_version_ 1850840812812763136