Exciton–polariton laser
We present a review of the investigations realized in the last decades of the phenomenon of the Bose–Einstein condensation (BEC) in the system of two-dimensional cavity polaritons in semiconductor nanostructures. The conditions at which the excitons interacting with cavity photons form new type of q...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2016 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2016
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/129100 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Exciton–polariton laser / S.A. Moskalenko, I.M. Tiginyanu // Физика низких температур. — 2016. — Т. 42, № 5. — С. 426-437. — Бібліогр.: 64 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862531512284479488 |
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| author | Moskalenko, S.A. Tiginyanu, I.M. |
| author_facet | Moskalenko, S.A. Tiginyanu, I.M. |
| citation_txt | Exciton–polariton laser / S.A. Moskalenko, I.M. Tiginyanu // Физика низких температур. — 2016. — Т. 42, № 5. — С. 426-437. — Бібліогр.: 64 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | We present a review of the investigations realized in the last decades of the phenomenon of the Bose–Einstein condensation (BEC) in the system of two-dimensional cavity polaritons in semiconductor nanostructures. The conditions at which the excitons interacting with cavity photons form new type of quasiparticles named as polaritons are described. Since polaritons can form in a microcavity a weakly interacting Bose gas, similarly to the exciton gas in semiconductors, the microcavity exciton–polariton BEC emerged in the last decades as a new direction of the exciton BEC in solids, promising for practical applications. The high interest in BEC of exciton–polaritons in semiconductor microcavities is related to the ultra-low threshold lasing which has been demonstrat-ed, in particular, for an electrically injected polariton laser based on bulk GaN microcavity diode working at room temperature.
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| first_indexed | 2025-11-24T04:28:33Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-129100 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-11-24T04:28:33Z |
| publishDate | 2016 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Moskalenko, S.A. Tiginyanu, I.M. 2018-01-16T13:12:07Z 2018-01-16T13:12:07Z 2016 Exciton–polariton laser / S.A. Moskalenko, I.M. Tiginyanu // Физика низких температур. — 2016. — Т. 42, № 5. — С. 426-437. — Бібліогр.: 64 назв. — англ. 0132-6414 PACS: 71.35.–y, 71.36.+c https://nasplib.isofts.kiev.ua/handle/123456789/129100 We present a review of the investigations realized in the last decades of the phenomenon of the Bose–Einstein condensation (BEC) in the system of two-dimensional cavity polaritons in semiconductor nanostructures. The conditions at which the excitons interacting with cavity photons form new type of quasiparticles named as polaritons are described. Since polaritons can form in a microcavity a weakly interacting Bose gas, similarly to the exciton gas in semiconductors, the microcavity exciton–polariton BEC emerged in the last decades as a new direction of the exciton BEC in solids, promising for practical applications. The high interest in BEC of exciton–polaritons in semiconductor microcavities is related to the ultra-low threshold lasing which has been demonstrat-ed, in particular, for an electrically injected polariton laser based on bulk GaN microcavity diode working at room temperature. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур К 100-летию со дня рождения К.Б. Толпыго Exciton–polariton laser Article published earlier |
| spellingShingle | Exciton–polariton laser Moskalenko, S.A. Tiginyanu, I.M. К 100-летию со дня рождения К.Б. Толпыго |
| title | Exciton–polariton laser |
| title_full | Exciton–polariton laser |
| title_fullStr | Exciton–polariton laser |
| title_full_unstemmed | Exciton–polariton laser |
| title_short | Exciton–polariton laser |
| title_sort | exciton–polariton laser |
| topic | К 100-летию со дня рождения К.Б. Толпыго |
| topic_facet | К 100-летию со дня рождения К.Б. Толпыго |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/129100 |
| work_keys_str_mv | AT moskalenkosa excitonpolaritonlaser AT tiginyanuim excitonpolaritonlaser |