Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance
The rare-earth Kondo semiconductor CeNiSn is investigated by point-contact and tunneling spectroscopy using mechanically controllable break junctions. I(V) characteristics and their derivatives are recorded for contacts from the metallic to the tunneling regime at temperatures between 0.1–8 K and in...
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| Published in: | Физика низких температур |
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| Date: | 2000 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/129106 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance / Yu.G. Naidyuk, K. Gloos, T. Takabatake // Физика низких температур. — 2000. — Т. 26, № 7. — С. 687-693. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862702641396580352 |
|---|---|
| author | Naidyuk, Yu.G. Gloos, K. Takabatake, T. |
| author_facet | Naidyuk, Yu.G. Gloos, K. Takabatake, T. |
| citation_txt | Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance / Yu.G. Naidyuk, K. Gloos, T. Takabatake // Физика низких температур. — 2000. — Т. 26, № 7. — С. 687-693. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | The rare-earth Kondo semiconductor CeNiSn is investigated by point-contact and tunneling spectroscopy using mechanically controllable break junctions. I(V) characteristics and their derivatives are recorded for contacts from the metallic to the tunneling regime at temperatures between 0.1–8 K and in magnetic fields up to 8 T. It is found that CeNiSn behaves like a compound with typical metallic properties instead of exhibiting the expected semiconducting behavior. The main spectral feature is a pronounced zero-bias conductance minimum of about 10 meV width, which appears to be of magnetic nature. These break-junction experiments provide no clear-cut evidence for an energy (pseudo) gap in CeNiSn.
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| first_indexed | 2025-12-07T16:45:53Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-129106 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T16:45:53Z |
| publishDate | 2000 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Naidyuk, Yu.G. Gloos, K. Takabatake, T. 2018-01-16T13:25:11Z 2018-01-16T13:25:11Z 2000 Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance / Yu.G. Naidyuk, K. Gloos, T. Takabatake // Физика низких температур. — 2000. — Т. 26, № 7. — С. 687-693. — Бібліогр.: 14 назв. — англ. 0132-6414 PACS: 71.27.+a, 73.40.Jn, 75.30.Mb https://nasplib.isofts.kiev.ua/handle/123456789/129106 The rare-earth Kondo semiconductor CeNiSn is investigated by point-contact and tunneling spectroscopy using mechanically controllable break junctions. I(V) characteristics and their derivatives are recorded for contacts from the metallic to the tunneling regime at temperatures between 0.1–8 K and in magnetic fields up to 8 T. It is found that CeNiSn behaves like a compound with typical metallic properties instead of exhibiting the expected semiconducting behavior. The main spectral feature is a pronounced zero-bias conductance minimum of about 10 meV width, which appears to be of magnetic nature. These break-junction experiments provide no clear-cut evidence for an energy (pseudo) gap in CeNiSn. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Электpонные свойства металлов и сплавов Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance Article published earlier |
| spellingShingle | Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance Naidyuk, Yu.G. Gloos, K. Takabatake, T. Электpонные свойства металлов и сплавов |
| title | Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance |
| title_full | Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance |
| title_fullStr | Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance |
| title_full_unstemmed | Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance |
| title_short | Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance |
| title_sort | break-junction experiments on the kondo semiconductor cenisn: tunnelling versus direct conductance |
| topic | Электpонные свойства металлов и сплавов |
| topic_facet | Электpонные свойства металлов и сплавов |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/129106 |
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