Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance

• Published in: Физика низких температур
• Date: 2000
• Main Authors: Naidyuk, Yu.G., Gloos, K., Takabatake, T.
• Format: Article
• Language: English
• Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2000
• Subjects: Электpонные свойства металлов и сплавов
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/129106
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance / Yu.G. Naidyuk, K. Gloos, T. Takabatake // Физика низких температур. — 2000. — Т. 26, № 7. — С. 687-693. — Бібліогр.: 14 назв. — англ.

The rare-earth Kondo semiconductor CeNiSn is investigated by point-contact and tunneling spectroscopy using mechanically controllable break junctions. I(V) characteristics and their derivatives are recorded for contacts from the metallic to the tunneling regime at temperatures between 0.1–8 K and in...