Negative magnetoresistance in indium antimonide whiskers doped with tin

Negative magnetoresistance of InSb whiskers with different impurity concentrations 4.4 × 10 ¹⁶–7.16 × 10 ¹⁷ cm −³ was studied in longitudinal magnetic field 0–14 T in the temperature range 4.2–77 K. The negative magnetoresistance reaches about 50% for InSb whiskers with impurity concentration in the...

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Published in:Физика низких температур
Date:2016
Main Authors: Druzhinin, A., Ostrovskii, I., Khoverko, Yu., Liakh-Kaguy, N.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2016
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/129135
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Negative magnetoresistance in indium antimonide whiskers doped with tin / A. Druzhinin, I. Ostrovskii, Yu. Khoverko, N. Liakh-Kaguy // Физика низких температур. — 2016. — Т. 42, № 6. — С. 581-585. — Бібліогр.: 25 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862569454064369664
author Druzhinin, A.
Ostrovskii, I.
Khoverko, Yu.
Liakh-Kaguy, N.
author_facet Druzhinin, A.
Ostrovskii, I.
Khoverko, Yu.
Liakh-Kaguy, N.
citation_txt Negative magnetoresistance in indium antimonide whiskers doped with tin / A. Druzhinin, I. Ostrovskii, Yu. Khoverko, N. Liakh-Kaguy // Физика низких температур. — 2016. — Т. 42, № 6. — С. 581-585. — Бібліогр.: 25 назв. — англ.
collection DSpace DC
container_title Физика низких температур
description Negative magnetoresistance of InSb whiskers with different impurity concentrations 4.4 × 10 ¹⁶–7.16 × 10 ¹⁷ cm −³ was studied in longitudinal magnetic field 0–14 T in the temperature range 4.2–77 K. The negative magnetoresistance reaches about 50% for InSb whiskers with impurity concentration in the vicinity to the metal–insulator transition. The negative magnetoresistance decreases to 35 and 25% for crystals with Sn concentration from the metal and dielectric side of the transition. The longitudinal magnetoresistance twice crosses the axis of the magnetic field induction for the lightly doped crystals. The behavior of the negative magnetoresistance could be explained by the existence of classical size effect, in particular boundary scattering in the subsurface whisker layer.
first_indexed 2025-11-26T01:42:50Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-129135
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 0132-6414
language English
last_indexed 2025-11-26T01:42:50Z
publishDate 2016
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
record_format dspace
spelling Druzhinin, A.
Ostrovskii, I.
Khoverko, Yu.
Liakh-Kaguy, N.
2018-01-16T15:28:18Z
2018-01-16T15:28:18Z
2016
Negative magnetoresistance in indium antimonide whiskers doped with tin / A. Druzhinin, I. Ostrovskii, Yu. Khoverko, N. Liakh-Kaguy // Физика низких температур. — 2016. — Т. 42, № 6. — С. 581-585. — Бібліогр.: 25 назв. — англ.
0132-6414
PACS: 76.60.–k, 72.15.Rn, 73.43.Qt
https://nasplib.isofts.kiev.ua/handle/123456789/129135
Negative magnetoresistance of InSb whiskers with different impurity concentrations 4.4 × 10 ¹⁶–7.16 × 10 ¹⁷ cm −³ was studied in longitudinal magnetic field 0–14 T in the temperature range 4.2–77 K. The negative magnetoresistance reaches about 50% for InSb whiskers with impurity concentration in the vicinity to the metal–insulator transition. The negative magnetoresistance decreases to 35 and 25% for crystals with Sn concentration from the metal and dielectric side of the transition. The longitudinal magnetoresistance twice crosses the axis of the magnetic field induction for the lightly doped crystals. The behavior of the negative magnetoresistance could be explained by the existence of classical size effect, in particular boundary scattering in the subsurface whisker layer.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Низкотемпеpатуpный магнетизм
Negative magnetoresistance in indium antimonide whiskers doped with tin
Article
published earlier
spellingShingle Negative magnetoresistance in indium antimonide whiskers doped with tin
Druzhinin, A.
Ostrovskii, I.
Khoverko, Yu.
Liakh-Kaguy, N.
Низкотемпеpатуpный магнетизм
title Negative magnetoresistance in indium antimonide whiskers doped with tin
title_full Negative magnetoresistance in indium antimonide whiskers doped with tin
title_fullStr Negative magnetoresistance in indium antimonide whiskers doped with tin
title_full_unstemmed Negative magnetoresistance in indium antimonide whiskers doped with tin
title_short Negative magnetoresistance in indium antimonide whiskers doped with tin
title_sort negative magnetoresistance in indium antimonide whiskers doped with tin
topic Низкотемпеpатуpный магнетизм
topic_facet Низкотемпеpатуpный магнетизм
url https://nasplib.isofts.kiev.ua/handle/123456789/129135
work_keys_str_mv AT druzhinina negativemagnetoresistanceinindiumantimonidewhiskersdopedwithtin
AT ostrovskiii negativemagnetoresistanceinindiumantimonidewhiskersdopedwithtin
AT khoverkoyu negativemagnetoresistanceinindiumantimonidewhiskersdopedwithtin
AT liakhkaguyn negativemagnetoresistanceinindiumantimonidewhiskersdopedwithtin