On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors

Two different approaches (presented in the literature as alternative approximations) to the problem of carrier-induced ferromagnetism in the system of disordered magnetic ions of a diluted magnetic semiconductor are analyzed. They are based on a self-consistent procedure for the mean exchange fields...

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Опубліковано в: :Физика низких температур
Дата:2000
Автори: Semenov, Yu.G., Ryabchenko, S.M.
Формат: Стаття
Мова:English
Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2000
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/129250
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors / Yu.G. Semenov, S.M. Ryabchenko // Физика низких температур. — 2003. — Т. 26, № 12. — С. 1197-1201. — Бібліогр.: 15 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-129250
record_format dspace
spelling Semenov, Yu.G.
Ryabchenko, S.M.
2018-01-18T14:45:45Z
2018-01-18T14:45:45Z
2000
On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors / Yu.G. Semenov, S.M. Ryabchenko // Физика низких температур. — 2003. — Т. 26, № 12. — С. 1197-1201. — Бібліогр.: 15 назв. — англ.
0132-6414
PACS: 75.70.Ak, 05.30.Fk
https://nasplib.isofts.kiev.ua/handle/123456789/129250
Two different approaches (presented in the literature as alternative approximations) to the problem of carrier-induced ferromagnetism in the system of disordered magnetic ions of a diluted magnetic semiconductor are analyzed. They are based on a self-consistent procedure for the mean exchange fields and the RKKY interaction. Calculations in the framework of exactly solvable model are carried out, and it shows that these approaches stem from two different contributions to the magnetic susceptibility. One stems from the diagonal part of the carrier-ion exchange interaction and corresponds to mean field approximation. The other one stems from the off-diagonal part of the same interaction and describes the indirect interaction between localized spins via free carriers. These two contributions can be responsible for the different magnetic properties. Thus, the aforementioned contributions are complementary but not alternative to each other. A general approach is proposed and compared with different approximations to the problem under consideration.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Низкоразмерные и неупорядоченные системы
On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors
spellingShingle On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors
Semenov, Yu.G.
Ryabchenko, S.M.
Низкоразмерные и неупорядоченные системы
title_short On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors
title_full On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors
title_fullStr On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors
title_full_unstemmed On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors
title_sort on the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors
author Semenov, Yu.G.
Ryabchenko, S.M.
author_facet Semenov, Yu.G.
Ryabchenko, S.M.
topic Низкоразмерные и неупорядоченные системы
topic_facet Низкоразмерные и неупорядоченные системы
publishDate 2000
language English
container_title Физика низких температур
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
format Article
description Two different approaches (presented in the literature as alternative approximations) to the problem of carrier-induced ferromagnetism in the system of disordered magnetic ions of a diluted magnetic semiconductor are analyzed. They are based on a self-consistent procedure for the mean exchange fields and the RKKY interaction. Calculations in the framework of exactly solvable model are carried out, and it shows that these approaches stem from two different contributions to the magnetic susceptibility. One stems from the diagonal part of the carrier-ion exchange interaction and corresponds to mean field approximation. The other one stems from the off-diagonal part of the same interaction and describes the indirect interaction between localized spins via free carriers. These two contributions can be responsible for the different magnetic properties. Thus, the aforementioned contributions are complementary but not alternative to each other. A general approach is proposed and compared with different approximations to the problem under consideration.
issn 0132-6414
url https://nasplib.isofts.kiev.ua/handle/123456789/129250
citation_txt On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors / Yu.G. Semenov, S.M. Ryabchenko // Физика низких температур. — 2003. — Т. 26, № 12. — С. 1197-1201. — Бібліогр.: 15 назв. — англ.
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first_indexed 2025-12-07T19:25:29Z
last_indexed 2025-12-07T19:25:29Z
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