On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors
Two different approaches (presented in the literature as alternative approximations) to the problem of carrier-induced ferromagnetism in the system of disordered magnetic ions of a diluted magnetic semiconductor are analyzed. They are based on a self-consistent procedure for the mean exchange fields...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2000 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/129250 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors / Yu.G. Semenov, S.M. Ryabchenko // Физика низких температур. — 2003. — Т. 26, № 12. — С. 1197-1201. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862731299895115776 |
|---|---|
| author | Semenov, Yu.G. Ryabchenko, S.M. |
| author_facet | Semenov, Yu.G. Ryabchenko, S.M. |
| citation_txt | On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors / Yu.G. Semenov, S.M. Ryabchenko // Физика низких температур. — 2003. — Т. 26, № 12. — С. 1197-1201. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | Two different approaches (presented in the literature as alternative approximations) to the problem of carrier-induced ferromagnetism in the system of disordered magnetic ions of a diluted magnetic semiconductor are analyzed. They are based on a self-consistent procedure for the mean exchange fields and the RKKY interaction. Calculations in the framework of exactly solvable model are carried out, and it shows that these approaches stem from two different contributions to the magnetic susceptibility. One stems from the diagonal part of the carrier-ion exchange interaction and corresponds to mean field approximation. The other one stems from the off-diagonal part of the same interaction and describes the indirect interaction between localized spins via free carriers. These two contributions can be responsible for the different magnetic properties. Thus, the aforementioned contributions are complementary but not alternative to each other. A general approach is proposed and compared with different approximations to the problem under consideration.
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| first_indexed | 2025-12-07T19:25:29Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-129250 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T19:25:29Z |
| publishDate | 2000 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Semenov, Yu.G. Ryabchenko, S.M. 2018-01-18T14:45:45Z 2018-01-18T14:45:45Z 2000 On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors / Yu.G. Semenov, S.M. Ryabchenko // Физика низких температур. — 2003. — Т. 26, № 12. — С. 1197-1201. — Бібліогр.: 15 назв. — англ. 0132-6414 PACS: 75.70.Ak, 05.30.Fk https://nasplib.isofts.kiev.ua/handle/123456789/129250 Two different approaches (presented in the literature as alternative approximations) to the problem of carrier-induced ferromagnetism in the system of disordered magnetic ions of a diluted magnetic semiconductor are analyzed. They are based on a self-consistent procedure for the mean exchange fields and the RKKY interaction. Calculations in the framework of exactly solvable model are carried out, and it shows that these approaches stem from two different contributions to the magnetic susceptibility. One stems from the diagonal part of the carrier-ion exchange interaction and corresponds to mean field approximation. The other one stems from the off-diagonal part of the same interaction and describes the indirect interaction between localized spins via free carriers. These two contributions can be responsible for the different magnetic properties. Thus, the aforementioned contributions are complementary but not alternative to each other. A general approach is proposed and compared with different approximations to the problem under consideration. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Низкоразмерные и неупорядоченные системы On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors Article published earlier |
| spellingShingle | On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors Semenov, Yu.G. Ryabchenko, S.M. Низкоразмерные и неупорядоченные системы |
| title | On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors |
| title_full | On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors |
| title_fullStr | On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors |
| title_full_unstemmed | On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors |
| title_short | On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors |
| title_sort | on the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors |
| topic | Низкоразмерные и неупорядоченные системы |
| topic_facet | Низкоразмерные и неупорядоченные системы |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/129250 |
| work_keys_str_mv | AT semenovyug onthetheoryofcarrierinducedferromagnetismindilutedmagneticsemiconductors AT ryabchenkosm onthetheoryofcarrierinducedferromagnetismindilutedmagneticsemiconductors |