The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system

• Veröffentlicht in: Физика низких температур
• Datum: 2016
• Hauptverfasser: Ahmed, A.M., Abd El-Mo’ez A. Mohamed, Mohamed, H.F., Diab, A.K., Mohamed, Aml M., Mazen, A.E.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2016
• Schlagworte: Низкотемпеpатуpный магнетизм
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/129293
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system / A.M. Ahmed, Abd El-Mo’ez A. Mohamed, H.F. Mohamed, A.K. Diab, Aml M. Mohamed, A.E. A. Mazen // Физика низких температур. — 2016. — Т. 42, № 9. — С. 951-958. — Бібліогр.: 34 назв. — англ.

This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La₀.₇Ba₀.₃MnO₃)₁–x/(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La₀.₇Ba₀.₃MnO₃, in contrast to (La₀.₇Ba₀.₃MnO₃)₀.₉/(NiO)₀.₁ composite.