The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system
This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La₀.₇Ba₀.₃MnO₃)₁–x/(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2016 |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2016
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system / A.M. Ahmed, Abd El-Mo’ez A. Mohamed, H.F. Mohamed, A.K. Diab, Aml M. Mohamed, A.E. A. Mazen // Физика низких температур. — 2016. — Т. 42, № 9. — С. 951-958. — Бібліогр.: 34 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862732866919596032 |
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| author | Ahmed, A.M. Abd El-Mo’ez A. Mohamed Mohamed, H.F. Diab, A.K. Mohamed, Aml M. Mazen, A.E.A. |
| author_facet | Ahmed, A.M. Abd El-Mo’ez A. Mohamed Mohamed, H.F. Diab, A.K. Mohamed, Aml M. Mazen, A.E.A. |
| citation_txt | The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system / A.M. Ahmed, Abd El-Mo’ez A. Mohamed, H.F. Mohamed, A.K. Diab, Aml M. Mohamed, A.E. A. Mazen // Физика низких температур. — 2016. — Т. 42, № 9. — С. 951-958. — Бібліогр.: 34 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La₀.₇Ba₀.₃MnO₃)₁–x/(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La₀.₇Ba₀.₃MnO₃, in contrast to (La₀.₇Ba₀.₃MnO₃)₀.₉/(NiO)₀.₁ composite.
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| first_indexed | 2025-12-07T19:33:54Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-129293 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T19:33:54Z |
| publishDate | 2016 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
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| spelling | Ahmed, A.M. Abd El-Mo’ez A. Mohamed Mohamed, H.F. Diab, A.K. Mohamed, Aml M. Mazen, A.E.A. 2018-01-18T17:37:23Z 2018-01-18T17:37:23Z 2016 The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system / A.M. Ahmed, Abd El-Mo’ez A. Mohamed, H.F. Mohamed, A.K. Diab, Aml M. Mohamed, A.E. A. Mazen // Физика низких температур. — 2016. — Т. 42, № 9. — С. 951-958. — Бібліогр.: 34 назв. — англ. 0132-6414 PACS: 75.47.Lx, PACS: 75.47.Gk, 72.80.Tm https://nasplib.isofts.kiev.ua/handle/123456789/129293 This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La₀.₇Ba₀.₃MnO₃)₁–x/(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La₀.₇Ba₀.₃MnO₃, in contrast to (La₀.₇Ba₀.₃MnO₃)₀.₉/(NiO)₀.₁ composite. Authors acknowledge the finical support provided by
 the Science and Technology Development Fund (STDF),
 Egypt, Grant project No 3002. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Низкотемпеpатуpный магнетизм The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system Article published earlier |
| spellingShingle | The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system Ahmed, A.M. Abd El-Mo’ez A. Mohamed Mohamed, H.F. Diab, A.K. Mohamed, Aml M. Mazen, A.E.A. Низкотемпеpатуpный магнетизм |
| title | The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_full | The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_fullStr | The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_full_unstemmed | The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_short | The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_sort | annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| topic | Низкотемпеpатуpный магнетизм |
| topic_facet | Низкотемпеpатуpный магнетизм |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/129293 |
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