The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system
This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La₀.₇Ba₀.₃MnO₃)₁–x/(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the...
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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| Zitieren: | The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system / A.M. Ahmed, Abd El-Mo’ez A. Mohamed, H.F. Mohamed, A.K. Diab, Aml M. Mohamed, A.E. A. Mazen // Физика низких температур. — 2016. — Т. 42, № 9. — С. 951-958. — Бібліогр.: 34 назв. — англ. |
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Ahmed, A.M. Abd El-Mo’ez A. Mohamed Mohamed, H.F. Diab, A.K. Mohamed, Aml M. Mazen, A.E.A. 2018-01-18T17:37:23Z 2018-01-18T17:37:23Z 2016 The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system / A.M. Ahmed, Abd El-Mo’ez A. Mohamed, H.F. Mohamed, A.K. Diab, Aml M. Mohamed, A.E. A. Mazen // Физика низких температур. — 2016. — Т. 42, № 9. — С. 951-958. — Бібліогр.: 34 назв. — англ. 0132-6414 PACS: 75.47.Lx, PACS: 75.47.Gk, 72.80.Tm https://nasplib.isofts.kiev.ua/handle/123456789/129293 This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La₀.₇Ba₀.₃MnO₃)₁–x/(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La₀.₇Ba₀.₃MnO₃, in contrast to (La₀.₇Ba₀.₃MnO₃)₀.₉/(NiO)₀.₁ composite. Authors acknowledge the finical support provided by the Science and Technology Development Fund (STDF), Egypt, Grant project No 3002. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Низкотемпеpатуpный магнетизм The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| spellingShingle |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system Ahmed, A.M. Abd El-Mo’ez A. Mohamed Mohamed, H.F. Diab, A.K. Mohamed, Aml M. Mazen, A.E.A. Низкотемпеpатуpный магнетизм |
| title_short |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_full |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_fullStr |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_full_unstemmed |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_sort |
annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| author |
Ahmed, A.M. Abd El-Mo’ez A. Mohamed Mohamed, H.F. Diab, A.K. Mohamed, Aml M. Mazen, A.E.A. |
| author_facet |
Ahmed, A.M. Abd El-Mo’ez A. Mohamed Mohamed, H.F. Diab, A.K. Mohamed, Aml M. Mazen, A.E.A. |
| topic |
Низкотемпеpатуpный магнетизм |
| topic_facet |
Низкотемпеpатуpный магнетизм |
| publishDate |
2016 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La₀.₇Ba₀.₃MnO₃)₁–x/(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La₀.₇Ba₀.₃MnO₃, in contrast to (La₀.₇Ba₀.₃MnO₃)₀.₉/(NiO)₀.₁ composite.
|
| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/129293 |
| citation_txt |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system / A.M. Ahmed, Abd El-Mo’ez A. Mohamed, H.F. Mohamed, A.K. Diab, Aml M. Mohamed, A.E. A. Mazen // Физика низких температур. — 2016. — Т. 42, № 9. — С. 951-958. — Бібліогр.: 34 назв. — англ. |
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2025-12-07T19:33:54Z |
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2025-12-07T19:33:54Z |
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