High-temperature quantum kinetic effect in silicon nanosandwiches

The negative- U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite b...

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Veröffentlicht in:Физика низких температур
Datum:2017
Hauptverfasser: Bagraev, N.T., Grigoryev, V.Yu., Klyachkin, L.E., Malyarenko, A.M., Mashkov, V.A., Romanov, V.V., Rul’, N.I.
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Sprache:Englisch
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2017
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/129360
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Zitieren:High-temperature quantum kinetic effect in silicon nanosandwiches / N.T. Bagraev, V.Yu. Grigoryev, L.E. Klyachkin, A.M. Malyarenko, V.A. Mashkov, V.V. Romanov, N.I. Rul’ // Физика низких температур. — 2017. — Т. 43, № 1. — С. 132-142. — Бібліогр.: 40 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Bagraev, N.T.
Grigoryev, V.Yu.
Klyachkin, L.E.
Malyarenko, A.M.
Mashkov, V.A.
Romanov, V.V.
Rul’, N.I.
author_facet Bagraev, N.T.
Grigoryev, V.Yu.
Klyachkin, L.E.
Malyarenko, A.M.
Mashkov, V.A.
Romanov, V.V.
Rul’, N.I.
citation_txt High-temperature quantum kinetic effect in silicon nanosandwiches / N.T. Bagraev, V.Yu. Grigoryev, L.E. Klyachkin, A.M. Malyarenko, V.A. Mashkov, V.V. Romanov, N.I. Rul’ // Физика низких температур. — 2017. — Т. 43, № 1. — С. 132-142. — Бібліогр.: 40 назв. — англ.
collection DSpace DC
container_title Физика низких температур
description The negative- U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high-temperatures up to the room temperature. As a certain version noted above we present the first findings of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure that represents the ultra-narrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface.
first_indexed 2025-12-07T17:34:03Z
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language English
last_indexed 2025-12-07T17:34:03Z
publishDate 2017
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
record_format dspace
spelling Bagraev, N.T.
Grigoryev, V.Yu.
Klyachkin, L.E.
Malyarenko, A.M.
Mashkov, V.A.
Romanov, V.V.
Rul’, N.I.
2018-01-19T14:05:33Z
2018-01-19T14:05:33Z
2017
High-temperature quantum kinetic effect in silicon nanosandwiches / N.T. Bagraev, V.Yu. Grigoryev, L.E. Klyachkin, A.M. Malyarenko, V.A. Mashkov, V.V. Romanov, N.I. Rul’ // Физика низких температур. — 2017. — Т. 43, № 1. — С. 132-142. — Бібліогр.: 40 назв. — англ.
0132-6414
PACS: 73.50.–h, 73.23.Ad
https://nasplib.isofts.kiev.ua/handle/123456789/129360
The negative- U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high-temperatures up to the room temperature. As a certain version noted above we present the first findings of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure that represents the ultra-narrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface.
The work was supported by the programme «5-100-
 2020», project 6.1.1 of SPSPU (2014); project 1963 of
 SPbPU (2014); the programme of fundamental studies of the
 Presidium of the Russian Academy of Sciences “Actual problems
 of low temperature physics” (grant 10.4); project 10.17
 “Interatomic and molecular interactions in gases and condensed
 matter”.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
К 100-летию со дня рождения И.М. Лифшица
High-temperature quantum kinetic effect in silicon nanosandwiches
Article
published earlier
spellingShingle High-temperature quantum kinetic effect in silicon nanosandwiches
Bagraev, N.T.
Grigoryev, V.Yu.
Klyachkin, L.E.
Malyarenko, A.M.
Mashkov, V.A.
Romanov, V.V.
Rul’, N.I.
К 100-летию со дня рождения И.М. Лифшица
title High-temperature quantum kinetic effect in silicon nanosandwiches
title_full High-temperature quantum kinetic effect in silicon nanosandwiches
title_fullStr High-temperature quantum kinetic effect in silicon nanosandwiches
title_full_unstemmed High-temperature quantum kinetic effect in silicon nanosandwiches
title_short High-temperature quantum kinetic effect in silicon nanosandwiches
title_sort high-temperature quantum kinetic effect in silicon nanosandwiches
topic К 100-летию со дня рождения И.М. Лифшица
topic_facet К 100-летию со дня рождения И.М. Лифшица
url https://nasplib.isofts.kiev.ua/handle/123456789/129360
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