On the nature of ionic liquid gating of Nd₂CuO₄ thin films
Recently, ionic liquid gating has been used to modulate the charge carrier properties of metal oxides. The mechanism behind it, however, is still a matter of debate. In this paper, we report experiments on doped and undoped Nd₂CuO₄. We find major resistance drops of the bilayer coupled to observatio...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2017 |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/129380 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | On the nature of ionic liquid gating of Nd₂CuO₄ thin films / Hasan Atesci, Francesco Coneri, Maarten Leeuwenhoek, Hans Hilgenkamp, Jan M. van Ruitenbeek // Физика низких температур. — 2017. — Т. 43, № 2. — С. 353-359. — Бібліогр.: 50 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862730795413667840 |
|---|---|
| author | Atesci, Hasan Coneri, Francesco Leeuwenhoek, Maarten Hilgenkamp, Hans Jan M. van Ruitenbeek |
| author_facet | Atesci, Hasan Coneri, Francesco Leeuwenhoek, Maarten Hilgenkamp, Hans Jan M. van Ruitenbeek |
| citation_txt | On the nature of ionic liquid gating of Nd₂CuO₄ thin films / Hasan Atesci, Francesco Coneri, Maarten Leeuwenhoek, Hans Hilgenkamp, Jan M. van Ruitenbeek // Физика низких температур. — 2017. — Т. 43, № 2. — С. 353-359. — Бібліогр.: 50 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | Recently, ionic liquid gating has been used to modulate the charge carrier properties of metal oxides. The mechanism behind it, however, is still a matter of debate. In this paper, we report experiments on doped and undoped Nd₂CuO₄. We find major resistance drops of the bilayer coupled to observations of the presence of a considerable Faradeic component in the gate current and of the appearance of charge transfer peaks in the cyclic voltammetry data. This leads us to propose a mechanism of gating based on irreversible electrochemical reactions, likely due to trace amounts of contaminations present in the ionic liquid. This work is therefore in line with previous reports confirming the presence of irreversible electrochemistry in ionic liquid gated electron- doped cuprates.
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| first_indexed | 2025-12-07T19:22:46Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-129380 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T19:22:46Z |
| publishDate | 2017 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Atesci, Hasan Coneri, Francesco Leeuwenhoek, Maarten Hilgenkamp, Hans Jan M. van Ruitenbeek 2018-01-19T14:27:02Z 2018-01-19T14:27:02Z 2017 On the nature of ionic liquid gating of Nd₂CuO₄ thin films / Hasan Atesci, Francesco Coneri, Maarten Leeuwenhoek, Hans Hilgenkamp, Jan M. van Ruitenbeek // Физика низких температур. — 2017. — Т. 43, № 2. — С. 353-359. — Бібліогр.: 50 назв. — англ. 0132-6414 PACS: 66.10.–x, 68.15.+e, 82.45.–h https://nasplib.isofts.kiev.ua/handle/123456789/129380 Recently, ionic liquid gating has been used to modulate the charge carrier properties of metal oxides. The mechanism behind it, however, is still a matter of debate. In this paper, we report experiments on doped and undoped Nd₂CuO₄. We find major resistance drops of the bilayer coupled to observations of the presence of a considerable Faradeic component in the gate current and of the appearance of charge transfer peaks in the cyclic voltammetry data. This leads us to propose a mechanism of gating based on irreversible electrochemical reactions, likely due to trace amounts of contaminations present in the ionic liquid. This work is therefore in line with previous reports confirming the presence of irreversible electrochemistry in ionic liquid gated electron- doped cuprates. This work is part of the research programme of the
 Foundation for Fundamental Research on Matter (FOM,
 12PR3047), which is financially supported by the Netherlands
 Organization for Scientific Research (NWO). The
 authors also gratefully acknowledge the technical support
 from J. Aarts and S. Voltan. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур К 100-летию со дня рождения И.М. Лифшица On the nature of ionic liquid gating of Nd₂CuO₄ thin films Article published earlier |
| spellingShingle | On the nature of ionic liquid gating of Nd₂CuO₄ thin films Atesci, Hasan Coneri, Francesco Leeuwenhoek, Maarten Hilgenkamp, Hans Jan M. van Ruitenbeek К 100-летию со дня рождения И.М. Лифшица |
| title | On the nature of ionic liquid gating of Nd₂CuO₄ thin films |
| title_full | On the nature of ionic liquid gating of Nd₂CuO₄ thin films |
| title_fullStr | On the nature of ionic liquid gating of Nd₂CuO₄ thin films |
| title_full_unstemmed | On the nature of ionic liquid gating of Nd₂CuO₄ thin films |
| title_short | On the nature of ionic liquid gating of Nd₂CuO₄ thin films |
| title_sort | on the nature of ionic liquid gating of nd₂cuo₄ thin films |
| topic | К 100-летию со дня рождения И.М. Лифшица |
| topic_facet | К 100-летию со дня рождения И.М. Лифшица |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/129380 |
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