Activation transport under quantum Hall regime in HgTe-based heterostructure

• Опубліковано в: : Физика низких температур
• Дата: 2017
• Автори: Gudina, S.V., Neverov, V.N., Novik, E.G., Ilchenko, E.V., Harus, G.I., Shelushinina, N.G., Podgornykh, S.M., Yakunin, M.V., Mikhailov, N.N., Dvoretsky, S.A.
• Формат: Стаття
• Мова: English
• Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2017
• Теми: XXI Уральская международная зимняя школа по физике полупроводников
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/129428
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Activation transport under quantum Hall regime in HgTe-based heterostructure / S.V. Gudina, V.N. Neverov, E.G. Novik, E.V. Ilchenko, G.I. Harus, N.G. Shelushinina, S.M. Podgornykh, M.V. Yakunin , N.N. Mikhailov, S.A. Dvoretsky // Физика низких температур. — 2017. — Т. 43, № 4. — С. 605-611. — Бібліогр.: 34 назв. — англ.

We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors ν of 1, 2 and 3) and the indications of the large values of the g factor ≅ 30–75 were found.