Activation transport under quantum Hall regime in HgTe-based heterostructure

We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity...

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Опубліковано в: :Физика низких температур
Дата:2017
Автори: Gudina, S.V., Neverov, V.N., Novik, E.G., Ilchenko, E.V., Harus, G.I., Shelushinina, N.G., Podgornykh, S.M., Yakunin, M.V., Mikhailov, N.N., Dvoretsky, S.A.
Формат: Стаття
Мова:Англійська
Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2017
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/129428
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Activation transport under quantum Hall regime in HgTe-based heterostructure / S.V. Gudina, V.N. Neverov, E.G. Novik, E.V. Ilchenko, G.I. Harus, N.G. Shelushinina, S.M. Podgornykh, M.V. Yakunin , N.N. Mikhailov, S.A. Dvoretsky // Физика низких температур. — 2017. — Т. 43, № 4. — С. 605-611. — Бібліогр.: 34 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Gudina, S.V.
Neverov, V.N.
Novik, E.G.
Ilchenko, E.V.
Harus, G.I.
Shelushinina, N.G.
Podgornykh, S.M.
Yakunin, M.V.
Mikhailov, N.N.
Dvoretsky, S.A.
author_facet Gudina, S.V.
Neverov, V.N.
Novik, E.G.
Ilchenko, E.V.
Harus, G.I.
Shelushinina, N.G.
Podgornykh, S.M.
Yakunin, M.V.
Mikhailov, N.N.
Dvoretsky, S.A.
citation_txt Activation transport under quantum Hall regime in HgTe-based heterostructure / S.V. Gudina, V.N. Neverov, E.G. Novik, E.V. Ilchenko, G.I. Harus, N.G. Shelushinina, S.M. Podgornykh, M.V. Yakunin , N.N. Mikhailov, S.A. Dvoretsky // Физика низких температур. — 2017. — Т. 43, № 4. — С. 605-611. — Бібліогр.: 34 назв. — англ.
collection DSpace DC
container_title Физика низких температур
description We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors ν of 1, 2 and 3) and the indications of the large values of the g factor ≅ 30–75 were found.
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publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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spelling Gudina, S.V.
Neverov, V.N.
Novik, E.G.
Ilchenko, E.V.
Harus, G.I.
Shelushinina, N.G.
Podgornykh, S.M.
Yakunin, M.V.
Mikhailov, N.N.
Dvoretsky, S.A.
2018-01-19T16:41:25Z
2018-01-19T16:41:25Z
2017
Activation transport under quantum Hall regime in HgTe-based heterostructure / S.V. Gudina, V.N. Neverov, E.G. Novik, E.V. Ilchenko, G.I. Harus, N.G. Shelushinina, S.M. Podgornykh, M.V. Yakunin , N.N. Mikhailov, S.A. Dvoretsky // Физика низких температур. — 2017. — Т. 43, № 4. — С. 605-611. — Бібліогр.: 34 назв. — англ.
0132-6414
PACS: 73.63.Hs, 73.43.Qt
https://nasplib.isofts.kiev.ua/handle/123456789/129428
We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors ν of 1, 2 and 3) and the indications of the large values of the g factor ≅ 30–75 were found.
The research was carried out within the state assignment
 of FASO of Russia (theme “Spin” No. 01201463330), supported
 in part by RFBR (project No. 17–02–00330). Samples
 were grown on the funds of the project “Fundamental
 Research of Ural Branch of Russian Academy of Sciences,
 No 15-9-2-21”.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
XXI Уральская международная зимняя школа по физике полупроводников
Activation transport under quantum Hall regime in HgTe-based heterostructure
Article
published earlier
spellingShingle Activation transport under quantum Hall regime in HgTe-based heterostructure
Gudina, S.V.
Neverov, V.N.
Novik, E.G.
Ilchenko, E.V.
Harus, G.I.
Shelushinina, N.G.
Podgornykh, S.M.
Yakunin, M.V.
Mikhailov, N.N.
Dvoretsky, S.A.
XXI Уральская международная зимняя школа по физике полупроводников
title Activation transport under quantum Hall regime in HgTe-based heterostructure
title_full Activation transport under quantum Hall regime in HgTe-based heterostructure
title_fullStr Activation transport under quantum Hall regime in HgTe-based heterostructure
title_full_unstemmed Activation transport under quantum Hall regime in HgTe-based heterostructure
title_short Activation transport under quantum Hall regime in HgTe-based heterostructure
title_sort activation transport under quantum hall regime in hgte-based heterostructure
topic XXI Уральская международная зимняя школа по физике полупроводников
topic_facet XXI Уральская международная зимняя школа по физике полупроводников
url https://nasplib.isofts.kiev.ua/handle/123456789/129428
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