Activation transport under quantum Hall regime in HgTe-based heterostructure
We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been...
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2017
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| Zitieren: | Activation transport under quantum Hall regime in HgTe-based heterostructure / S.V. Gudina, V.N. Neverov, E.G. Novik, E.V. Ilchenko, G.I. Harus, N.G. Shelushinina, S.M. Podgornykh, M.V. Yakunin , N.N. Mikhailov, S.A. Dvoretsky // Физика низких температур. — 2017. — Т. 43, № 4. — С. 605-611. — Бібліогр.: 34 назв. — англ. |
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Gudina, S.V. Neverov, V.N. Novik, E.G. Ilchenko, E.V. Harus, G.I. Shelushinina, N.G. Podgornykh, S.M. Yakunin, M.V. Mikhailov, N.N. Dvoretsky, S.A. 2018-01-19T16:41:25Z 2018-01-19T16:41:25Z 2017 Activation transport under quantum Hall regime in HgTe-based heterostructure / S.V. Gudina, V.N. Neverov, E.G. Novik, E.V. Ilchenko, G.I. Harus, N.G. Shelushinina, S.M. Podgornykh, M.V. Yakunin , N.N. Mikhailov, S.A. Dvoretsky // Физика низких температур. — 2017. — Т. 43, № 4. — С. 605-611. — Бібліогр.: 34 назв. — англ. 0132-6414 PACS: 73.63.Hs, 73.43.Qt https://nasplib.isofts.kiev.ua/handle/123456789/129428 We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors ν of 1, 2 and 3) and the indications of the large values of the g factor ≅ 30–75 were found. The research was carried out within the state assignment of FASO of Russia (theme “Spin” No. 01201463330), supported in part by RFBR (project No. 17–02–00330). Samples were grown on the funds of the project “Fundamental Research of Ural Branch of Russian Academy of Sciences, No 15-9-2-21”. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур XXI Уральская международная зимняя школа по физике полупроводников Activation transport under quantum Hall regime in HgTe-based heterostructure Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
Activation transport under quantum Hall regime in HgTe-based heterostructure |
| spellingShingle |
Activation transport under quantum Hall regime in HgTe-based heterostructure Gudina, S.V. Neverov, V.N. Novik, E.G. Ilchenko, E.V. Harus, G.I. Shelushinina, N.G. Podgornykh, S.M. Yakunin, M.V. Mikhailov, N.N. Dvoretsky, S.A. XXI Уральская международная зимняя школа по физике полупроводников |
| title_short |
Activation transport under quantum Hall regime in HgTe-based heterostructure |
| title_full |
Activation transport under quantum Hall regime in HgTe-based heterostructure |
| title_fullStr |
Activation transport under quantum Hall regime in HgTe-based heterostructure |
| title_full_unstemmed |
Activation transport under quantum Hall regime in HgTe-based heterostructure |
| title_sort |
activation transport under quantum hall regime in hgte-based heterostructure |
| author |
Gudina, S.V. Neverov, V.N. Novik, E.G. Ilchenko, E.V. Harus, G.I. Shelushinina, N.G. Podgornykh, S.M. Yakunin, M.V. Mikhailov, N.N. Dvoretsky, S.A. |
| author_facet |
Gudina, S.V. Neverov, V.N. Novik, E.G. Ilchenko, E.V. Harus, G.I. Shelushinina, N.G. Podgornykh, S.M. Yakunin, M.V. Mikhailov, N.N. Dvoretsky, S.A. |
| topic |
XXI Уральская международная зимняя школа по физике полупроводников |
| topic_facet |
XXI Уральская международная зимняя школа по физике полупроводников |
| publishDate |
2017 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors ν of 1, 2 and 3) and the indications of the large values of the g factor ≅ 30–75 were found.
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| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/129428 |
| citation_txt |
Activation transport under quantum Hall regime in HgTe-based heterostructure / S.V. Gudina, V.N. Neverov, E.G. Novik, E.V. Ilchenko, G.I. Harus, N.G. Shelushinina, S.M. Podgornykh, M.V. Yakunin , N.N. Mikhailov, S.A. Dvoretsky // Физика низких температур. — 2017. — Т. 43, № 4. — С. 605-611. — Бібліогр.: 34 назв. — англ. |
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| first_indexed |
2025-12-07T16:20:00Z |
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2025-12-07T16:20:00Z |
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