Intrinsically shunted Josephson junctions for electronics applications
Conventional Josephson metal-insulator-metal devices are inherently underdamped and exhibit hysteretic current -voltage response due to a very high subgap resistance compared to that in the normal state. At the same time, overdamped junctions with single-valued characteristics are needed for most su...
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| Опубліковано в: : | Физика низких температур |
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| Дата: | 2017 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2017
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Intrinsically shunted Josephson junctions for electronics applications / M. Belogolovskii, E. Zhitlukhina, V. Lacquaniti, N. De Leo, M. Fretto, A. Sosso // Физика низких температур. — 2017. — Т. 43, № 7. — С. 950-961. — Бібліогр.: 75 назв. — англ. |
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Belogolovskii, M. Zhitlukhina, E. Lacquaniti, V. De Leo, N. Fretto, M. Sosso, A. 2018-01-19T20:43:59Z 2018-01-19T20:43:59Z 2017 Intrinsically shunted Josephson junctions for electronics applications / M. Belogolovskii, E. Zhitlukhina, V. Lacquaniti, N. De Leo, M. Fretto, A. Sosso // Физика низких температур. — 2017. — Т. 43, № 7. — С. 950-961. — Бібліогр.: 75 назв. — англ. 0132-6414 PACS: 85.25.Cp, 73.23.–b, 68.55.aj https://nasplib.isofts.kiev.ua/handle/123456789/129526 Conventional Josephson metal-insulator-metal devices are inherently underdamped and exhibit hysteretic current -voltage response due to a very high subgap resistance compared to that in the normal state. At the same time, overdamped junctions with single-valued characteristics are needed for most superconducting digital applications. The usual way to overcome the hysteretic behavior is to place an external low-resistance normal-metal shunt in parallel with each junction. Unfortunately, such solution results in a considerable complication of the circuitry design and introduces parasitic inductance through the junction. This paper provides a concise overview of some generic approaches that have been proposed in order to realize internal shunting in Josephson heterostructures with a barrier that itself contains the desired resistive component. The main attention is paid to self-shunted devices with local weak-link transmission probabilities that are so strongly disordered in the interface plane that transmission probabilities are tiny for the main part of the transition region between two super-conducting electrodes, while a small part of the interface is well transparent. We discuss the possibility of realizing a universal bimodal distribution function and emphasize advantages of such junctions that can be considered as a new class of self-shunted Josephson devices promising for practical applications in superconducting electronics operating at 4.2 K. The study was carried out within the Fundamental Research Programme funded by the MES of Ukraine (Project No. 0117U002360). en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Сверхпроводящие и мезоскопические структуры. К 70-летию со дня рождения А.Н. Омельянчука Intrinsically shunted Josephson junctions for electronics applications Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Intrinsically shunted Josephson junctions for electronics applications |
| spellingShingle |
Intrinsically shunted Josephson junctions for electronics applications Belogolovskii, M. Zhitlukhina, E. Lacquaniti, V. De Leo, N. Fretto, M. Sosso, A. Сверхпроводящие и мезоскопические структуры. К 70-летию со дня рождения А.Н. Омельянчука |
| title_short |
Intrinsically shunted Josephson junctions for electronics applications |
| title_full |
Intrinsically shunted Josephson junctions for electronics applications |
| title_fullStr |
Intrinsically shunted Josephson junctions for electronics applications |
| title_full_unstemmed |
Intrinsically shunted Josephson junctions for electronics applications |
| title_sort |
intrinsically shunted josephson junctions for electronics applications |
| author |
Belogolovskii, M. Zhitlukhina, E. Lacquaniti, V. De Leo, N. Fretto, M. Sosso, A. |
| author_facet |
Belogolovskii, M. Zhitlukhina, E. Lacquaniti, V. De Leo, N. Fretto, M. Sosso, A. |
| topic |
Сверхпроводящие и мезоскопические структуры. К 70-летию со дня рождения А.Н. Омельянчука |
| topic_facet |
Сверхпроводящие и мезоскопические структуры. К 70-летию со дня рождения А.Н. Омельянчука |
| publishDate |
2017 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
Conventional Josephson metal-insulator-metal devices are inherently underdamped and exhibit hysteretic current -voltage response due to a very high subgap resistance compared to that in the normal state. At the same time, overdamped junctions with single-valued characteristics are needed for most superconducting digital applications. The usual way to overcome the hysteretic behavior is to place an external low-resistance normal-metal shunt in parallel with each junction. Unfortunately, such solution results in a considerable complication of the circuitry design and introduces parasitic inductance through the junction. This paper provides a concise overview of some generic approaches that have been proposed in order to realize internal shunting in Josephson heterostructures with a barrier that itself contains the desired resistive component. The main attention is paid to self-shunted devices with local weak-link transmission probabilities that are so strongly disordered in the interface plane that transmission probabilities are tiny for the main part of the transition region between two super-conducting electrodes, while a small part of the interface is well transparent. We discuss the possibility of realizing a universal bimodal distribution function and emphasize advantages of such junctions that can be considered as a new class of self-shunted Josephson devices promising for practical applications in superconducting electronics operating at 4.2 K.
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| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/129526 |
| citation_txt |
Intrinsically shunted Josephson junctions for electronics applications / M. Belogolovskii, E. Zhitlukhina, V. Lacquaniti, N. De Leo, M. Fretto, A. Sosso // Физика низких температур. — 2017. — Т. 43, № 7. — С. 950-961. — Бібліогр.: 75 назв. — англ. |
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2025-12-07T19:16:25Z |
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2025-12-07T19:16:25Z |
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